Sandia Corporation

National Technology & Engineering Solutions of Sandia, LLC

Socpra Sciences Et Genie S.e.c.

Gregory A Ten Eyck

David Bruce Burckel

Malcolm Carroll

Martin Rudolph

Sophie Rochette

John King Gamble

A quantum dot structure having a split-gate geometry is provided. The quantum dot is configured for incorporation into a quantum dot array of a quantum processing unit. A gap between a reservoir accumulation gate and a quantum dot accumulation gate provides a tunnel barrier between an electric charge reservoir and a quantum dot well. An electrical potential applied to the gates defines a tunnel barrier height, width and charge tunneling rate between the well and the reservoir without relying on any barrier gate to control the charge tunneling rate.

Electronic circuit for control or coupling of single charges or spins and methods therefor

The fabrication of small-scale structures is disclosed. A unit-cell of a small-scale structure with non-planar features is fabricated by forming a membrane on a suitable material. A pattern is formed in the membrane and a portion of the substrate underneath the membrane is removed to form a cavity. Resonators are then directionally deposited on the wall or sides of the cavity. The cavity may be rotated during deposition to form closed-loop resonators. The resonators may be non-planar. The unit-cells can be formed in a layer that includes an array of unit-cells.

Fabrication method for small-scale structures with non-planar features

Fabrication of small-scale structures with non-planar features

Growing community of inventors

Albuquerque, NM, United States of America

Gregory A Ten Eyck