Motorola Corporation

Gregor Braeckelmann

Ramnath Venkatraman

Suresh Venkatesan

Olubunmi O Adetutu

Douglas Michael Reber

Alexander Barr

Robert W Fiordalice

Stanley Michael Filipiak

Matthew Thomas Herrick

Dean J Denning

Cindy Reidsema Simpson

Ajay Jain

Stuart E Greer

David Clegg

Brian George Anthony

Cristiano Capasso

Stephen R Crown

Rebecca G Cole

An interconnect overlies a semiconductor device substrate ( ). In one embodiment, a conductive barrier layer overlies a portion of the interconnect, a passivation layer ( ) overlies the conductive barrier layer and the passivation layer ( ) has an opening that exposes portions of the conductive barrier layer ( ). In an alternate embodiment a passivation layer ( ) overlies the interconnect, the passivation layer ( ) has an opening ( ) that exposes the interconnect and a conductive barrier layer ( ) overlies the interconnect within the opening ( ).

Method of forming semiconductor device including interconnect barrier layers

A method for forming a semiconductor device is disclosed in which a fluorinated silicon dioxide layer is formed over a semiconductor substrate. A first undoped silicon dioxide layer, with a thickness preferably less than approximately 50 nanometers, is then formed on the fluorinated silicon dioxide layer with a PECVD process wherein a power ratio of a high frequency power source of the PECVD reactor to a low frequency power source is preferably in a range of approximately 0.2:1 to 0.4:1. In one embodiment, a second undoped silicon dioxide layer may be formed prior to forming the fluorinated silicon layer. The second undoped silicon dioxide, the fluorinated silicon dioxide layer, and the first undoped silicon dioxide layer may be formed sequentially in the same plasma enhanced chemical vapor deposition process chamber during a single chamber evacuation cycle. The first undoped silicon dioxide layer is preferably characterized as having a refractive index greater than approximately 1.460. The first undoped silicon dioxide layer has a compressive stress that is approximately 1.5 times greater than the fluorinated silicon dioxide layer. In one embodiment, the first undoped silicon dioxide layer has a ratio of silicon atoms to oxygen atoms that is greater than 1:2. In one embodiment, the first undoped silicon dioxide layer and the fluorinated silicon dioxide layer are chemically vapor deposited using a TEOS precursor.

Reduced water adsorption for interlayer dielectric

An interconnect (,) is formed overlying a substrate (,). In one embodiment, an adhesion/barrier layer (,), a copper-alloy seed layer (,), and a copper film (,) are deposited overlying the substrate (,), and the substrate (,) is annealed. In an alternate embodiment, a copper film is deposited over the substrate, and the copper film is annealed. In yet another embodiment, an adhesion/barrier layer (,), a seed layer (,), a conductive film (,), and a copper-alloy capping film (,) are deposited over the substrate (,) to form an interconnect (,). The deposition and annealing steps can be performed on a common processing platform.

Method for forming a semiconductor device

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Austin, TX, United States of America

Gregor Braeckelmann