Intel Corporation

Gregor Bracher

Peter Baumgartner

Philipp Riess

Uwe Hodel

Luis Giles

Andreas Lachmann

Vase Jovanov

Karl-Henrik Ryden

A semiconductor device is proposed. The semiconductor device includes a source region of a field effect transistor having a first conductivity type, a body region of the field effect transistor having a second conductivity type, and a drain region of the field effect transistor having the first conductivity type. The source region, the drain region, and the body region are located in a semiconductor substrate of the semiconductor device and the body region is located between the source region and the drain region. The drain region extends from the body region through a buried portion of the drain region to a drain contact portion of the drain region located at a surface of the semiconductor substrate, the buried portion of the drain region is located beneath a spacer doping region, and the spacer doping region is located within the semiconductor substrate.

Semiconductor devices and methods for forming semiconductor devices

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Munich, Germany

Gregor Bracher