International Business Machines Corporation

Svg Lithography Systems, Inc.

Zygo Corporation

Asml Holding N.v.

Other

Gregg M Gallatin

Alan Edward Rosenbluth

Kafai Lai

Maharaj Mukherjee

Mark Alan Lavin

Shlomo Shlafman

Dov Ramm

Emanuel Gofman

Andrew W McCullough

Peter J De Groot

Xavier Colonna De Lega

Robert J Stoner

Michael J Darwin

Nakgeuon Seong

Ronald L Gordon

Justin Lloyd Kreuzer

Timothy A Brunner

Frances Anne Houle

Mark L Oskotsky

Alexey Y Lvov

William Dinan Hinsberg

John Allen Hoffnagle

Michael L Nelson

Stuart T Stanton

Martha Inez Sanchez

Zheng G Chen

Stan Drazkiewicz

David Angeley

Frits Zernike

A method for determining an image of a patterned object formed by a polychromatic lithographic projection system having a laser radiation source of a finite spectral bandwidth and a lens for imaging the patterned object to an image plane within a resist layer. The method comprises providing patterns for the object, a spectrum of the radiation source to be used in the lithographic projection system, an intensity and polarization distribution of the radiation source, and a lens impulse response in the spatial domain or in the spatial frequency domain of the image. The method then includes forming a polychromatic 4D bilinear vector kernel comprising a partially coherent polychromatic joint response between pairs of points in the spatial domain or in the spatial frequency domain, determining the dominant polychromatic 2D kernels of the polychromatic 4D bilinear vector kernel, and determining the image of the patterned object from convolutions of the object patterns with the dominant polychromatic 2D kernels.

Fast method to model photoresist images using focus blur and resist blur

Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.

Interferometer and method for measuring characteristics of optically unresolved surface features

Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

Simultaneous computation of multiple points on one or multiple cut lines

Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

Performance in model-based OPC engine utilizing efficient polygon pinning method

Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parameterized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.

A fast method of verifying a lithographic mask design is provided wherein catastrophic errors are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models, including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side-lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.

Printability verification by progressive modeling accuracy

Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchical arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchical arrangement to ultimately correct for optical lithography.

Renesting interaction map into design for efficient long range calculations

A first method to compute a phase map within an optical proximity correction simulation kernel utilizes simulated wavefront information from randomly generated data. A second method uses measured data from optical tools. A phase map is created by analytically embedding a randomly generated two-dimensional array of complex numbers of wavefront information, and performing an inverse Fourier Transform on the resultant array. A filtering function requires the amplitude of each element of the array to be multiplied by a Gaussian function. A power law is then applied to the array. The elements of the array are shuffled, and converted from the phasor form to real/imaginary form. A two-dimensional Fast Fourier Transform is applied. The array is then unshuffled, and converted back to phasor form.

Incorporation of a phase map into fast model-based optical proximity correction simulation kernels to account for near and mid-range flare

A method is described for performing model-based optical proximity corrections on a mask layout used in an optical lithography process having a plurality of mask shapes. Model-based optical proximity correction is performed by computing the image intensity on selected evaluation points on the mask layout. The image intensity to be computed includes optical flare and stray light effects due to the interactions between the shapes on the mask layout. The computation of the image intensity involves sub-dividing the mask layout into a plurality of regions, each region at an increasing distance from the evaluation point. The contributions of the optical flare and stray light effects due to mask shapes in each of the regions are then determined. Finally, all the contributions thus obtained are combined to obtain the final computation of the image intensity at the selected point.

Fast and accurate optical proximity correction engine for incorporating long range flare effects

A method is provided for optimizing the number of kernels N used in a sum of coherent sources (SOCS) for optical proximity correction in an optical microlithography process, including setting the number of kernels N to a predetermined minimum value Nmin, where a determination is made as to whether an accuracy estimate of calculated intensity is within a tolerable value, and a determination is also made as to whether an added X/Y asymmetry estimate of the calculated intensity is negligible.

Method for optimizing a number of kernels used in a sum of coherent sources for optical proximity correction in an optical microlithography process

An illumination system having an array optical element with different illumination regions corresponding or matched to different line width variations printed on a photosensitive material. The array optical element may be a filter, diffractive optical element, or micro lens array having illumination regions producing different types of illumination properties or characteristics. Each of the illumination regions are matched or correspond to a respective region on a patterning device to provide optimized exposure of a photosensitive material. The optical element may be used to tailor a conventional illumination system to the unique characteristics of the projection optics used in a system, thereby compensating for vertical and horizontal bias or variations in line width for features oriented in the vertical and horizontal direction.

Illumination system with spatially controllable partial coherence compensating for line width variances

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Newtown, CT, United States of America

Gregg M Gallatin