Innovative Photonic Solutions, Inc.

Trumpf Photonics, Inc.

Metrohm Spectro, Inc.

Greg W Charache

Scott L Rudder

Holger Schlüter

John Charles Connolly

Robert Wallace Roff

John Hostetler

Raymond Joseph Menna

Claus Schnitzler

Faraz Hashmi

Dmitriy Petrov

Ching-Long Jiang

Radosveta Radionova

A dual-diameter armor jacketing assembly method for protecting the fiber optic cable of an optoelectronic module is demonstrated. This method allows for rigid attachment of the armor jacketing to both the optoelectronic module housing and the fiber connector and also for rotation of the fiber connector for polarization maintaining fiber assemblies.

Dual-diameter jacketed fiber-coupled optoelectronic module

A method is disclosed for providing enhanced quantitative analysis of materials by a dual-laser Raman probe wherein the wavelengths of the lasers used to illuminate a target object are selected in a manner to improve and enhance the quantitative analysis performance of the Raman signals.

Method for selection of Raman excitation wavelengths in multi-source Raman probe

A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.

High-power semiconductor laser

Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

Laser facet passivation

Growing community of inventors

East Windsor, NJ, United States of America

Greg W Charache