Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Graham Wright

Daniel R Tieger

Daniel Alvarado

Alexander S Perel

Jay Thomas Scheuer

Craig Richard Chaney

Alexandre Likhanskii

Shreyansh P Patel

Bon-Woong Koo

Klaus Becker

Jay S Johnson

Frank Sinclair

Svetlana Radovanov

Tseh-Jen Hsieh

Robert C Lindberg

Ronald Johnson

Shardul Patel

You Chia Li

William R Bogiages, Jr

Brian S Gori

Benjamin Oswald

Peter F Kurunczi

Adam M McLaughlin

Eric D Wilson

Ori Noked

Stephen Krause

Michael St Peter

Ryan C Prager

Suren Madunts

Jacob Mullin

Mateo Navarro Goldaraz

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

Temperature control for insertable target holder for solid dopant materials

An ion source for generating an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source to introduce an organoaluminium compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas is also introduced to the arc chamber. The chloride co-flow reduces the buildup of decomposition material that occurs within the arc chamber. This buildup may occur at the gas bushing, the extraction aperture or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is periodically introduced, based on hours of operation or the measured uniformity of the extracted ion beam. The second gas may be introduced from second gas source or from a vaporizer.

Ion source for controlling decomposition buildup using chlorine co-gas

An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

Device to control uniformity of extracted ion beam

An ion source that is capable of different modes of operation is disclosed. A vaporizer is in communication with the ion source. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as an inert gas, while heating the vaporizer. When operating in a second mode, the ion source may supply a second gas, which may be an organoaluminium gas. When operating in a third mode, the ion source may supply the second gas, while heating the vaporizer. Ions having single charges may be created in the first and second modes, while ions having multiple charges may be created in the third mode.

Ion source having different modes of operation

An ion source with a crucible is disclosed. In some embodiments, the crucible contains a solid dopant material, such as a metal. A porous wicking tip is disposed in the crucible in contact with the solid dopant material. The porous wicking tip may be a tube with one or more interior conduits. Alternatively, the porous tip may be two concentric cylinders with a plurality of rods disposed in the annular ring between the two cylinders. Alternatively, the porous tip may be one or more foil layers wound together. In each of these embodiments, the wicking tip can be used to control the flow rate of molten dopant material to the arc chamber.

Molten liquid transport for tunable vaporization in ion sources

Single-slot tubular cathode

An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. A solid target is also disposed in the arc chamber. When the insertable target holder is used, multicharged ions are created. When the insertable target holder is retracted, single charged ions are created by only etching the solid dopant-containing compound.

Hybrid ion source for aluminum ion generation using a target holder and a solid target

An ion source that is capable of different modes of operation is disclosed. A solid target may be disposed in the arc chamber. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may supply an organoaluminium gas. Ions having single charges may be created in the first mode, while ions having multiple charges may be created in the second mode. In some embodiments, the solid target may be retractable.

Hybrid ion source for aluminum ion generation using organoaluminium compounds and a solid target

An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.

System and method for introducing aluminum to an ion source

An ion source is provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge mixture. The charge mixture may include a first portion, comprising an elemental metal; and a second portion, comprising a heterogeneous metal fluoride compound.

Composite ion source based upon heterogeneous metal-metal fluoride system

A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

Crucible design for liquid metal in an ion source

An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

Variable thickness ion source extraction plate

A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

Extended cathode and repeller life by active management of halogen cycle

An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.

Growing community of inventors

Newburyport, MA, United States of America

Graham Wright