International Business Machines Corporation

Globalfoundries Inc.

Graham M Bates

Eric Jeffrey White

Eva A Shah

Matthew T Tiersch

Michael T Brigham

Jason P Ritter

Joseph K Comeau

John J Bandy

Thomas L McDevitt

Jeffery A Brigante

Yoba Amoah

Joseph P Hasselbach

David Domina

James L Hardy, Jr

Bradley M Mahan

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of metals and use thereof

A calibration gauge, an apparatus and a method for calibrating sensors that detect wafer protrusion from a wafer cassette using the calibration gauge. The calibration gauge includes a disk having a first region which is a circular sector of central angle Ahaving a constant radius Rabout a center and an integral second region of increasing radius about the center, the increasing radius increasing from Rto Rthrough a central angle A, wherein Ris greater than Rand A+Aequals 360&#xb0;.

Method and apparatus for calibrating sensors that detect wafer protrusion from a wafer cassette

A method and apparatus for removing a pad adhesively secured to a platen. The apparatus includes a barrel assembly having a clamp assembly fixedly attached to a perimeter of the barrel assembly; a rotatable handle assembly nested within the barrel assembly; and a ratchet assembly nested between the handle assemble and the barrel assembly the ratchet assembly configured to engage the rotatable handle assembly.

Apparatus and method for removing a CMP pad from a platen

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of copper and use thereof

A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film.

Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics

A patterned portion of a patterned semiconductor substrate is removed by abrasive mechanical planarization employing an abrasive pad but without employing any slurry. Preferably, water is supplied to enhance the removal rate during the mechanical planarization. The removal rate of material is substantially independent for common materials employed in back-end-of-line (BEOL) semiconductor materials, which enables non-selective removal of the material containing metallization structures. The removal rate of silicon is lower than the removal rate for the BEOL semiconductor materials, enabling a self-stopping planarization process.

Slurryless mechanical planarization for substrate reclamation

The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

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Waterbury, VT, United States of America

Graham M Bates