Forschungsverbund Berlin E.v.

Osram Opto Semiconductors Gmbh

Ferdinand-braun-institut Ggmbh, Leibniz-institut Fur Höchstfrequenztechnik

Götz Erbert

Hans Wenzel

Markus Weyers

Martin Spreemann

Paul Crump

Andre Müller

Bernd Sumpf

Andrea Knigge

Andreas Klehr

Günther Tränkle

Martin Zorn

Jonathan Decker

Olaf Brox

Jörg Fricke

Katrin Paschke

Joachim Piprek

Thorben Kaul

Frank Bugge

Christoph M Schultz

Andre Maaßdorf

Agnieszka Pietrzak

Martin Hofmann

A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.

Diode laser with improved mode profile

The inventive waveguide structure comprises a first waveguide region having a constant first width adapted to guide electromagnetic waves mode sustainably along its longitudinal axis; a second waveguide region adapted to guide electromagnetic waves mode sustainably along its longitudinal axis, wherein the longitudinal axis of the first waveguide region and the longitudinal axis of the second waveguide region form a common longitudinal axis of the waveguide structure, wherein a first end face of the first waveguide region and a first end face of the second waveguide region are aligned with each other, the width of the first end face of the second waveguide region corresponding to the first width, and the width of the second waveguide region along its longitudinal axis widens from the first end face to a second end face to a second width greater than the first width.

Waveguide structure and optical system with waveguide structure

Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dis a distance of the trench to the active layer, w is a width of the trench and &#x394;n is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

Laser diode with distributed feedback and method for producing

An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.

System for frequency conversion, semiconducting device and method for operating and manufacturing the same

A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium () having an emission maximum at a first wavelength (&#x3bb;), wherein a first reflector () is arranged below the stripe-shaped active medium () and a second reflector () is arranged above the stripe-shaped active medium (), with the first reflector () facing the second reflector (), wherein the first reflector () and a second reflector () have a reflectivity maximum in the region of the first wavelength (&#x3bb;), wherein a third reflector () and a fourth reflector () are each arranged on a side above or next to the stripe-shaped active medium (), wherein the third reflector () faces the fourth reflector (), and wherein the third reflector () and the fourth reflector () have a reflectivity maximum in the region of a second wavelength (&#x3bb;), wherein the first wavelength (&#x3bb;) is greater than the second wavelength (&#x3bb;).

Two-cavity surface-emitting laser

A semiconductor laser has an antiresonant waveguide (), which is formed by a layer sequence applied to a substrate (). The layer sequence has outer waveguide regions (), reflection layers (), and a waveguide core () with an active layer (). With this structure, semiconductor lasers with only slight vertical beam divergence and with a large beam cross section can be produced.

Semiconductor laser

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Löbau, Germany

Götz Erbert