Thin Film Electronics Asa

Acreo Ab

Telefonaktiebolaget Lm Ericsson (Publ)

Lintec Corporation

Acreo Swedish Ict Ab

Rise Acreo Ab

Göran Gustafsson

Hans Gude Gudesen

Johan Carlsson

Per-Erik Nordal

Magnus Berggren

Mats Sandberg

Geirr Ivarsson Leistad

Mats Johansson

Christer Karlsson

Olle Jonny Hagel

Xavier Crispin

Michael O Thompson

Paul Asger Eriksen

Kazuya Katoh

David A Nilsson

Nathaniel D Robinson

Goran Palmskog

Per Bröms

Peter Andersson Ersman

Olle Inganäs

Per Hamberg

Jun Kawahara

Rickard Liljedahl

Per Sandström

Staffan Björklid

Oscar Larsson

Grzegorz Greczynski

Xin Wang

Lucimara Stolz Roman

Geirr Ivarsson Leidstad

Lars Herlogsson

Isak Engquist

Linda Andersson

Per Carlsen

Olle-Johnny Hagel

Xiaodong Wang

Negar Abdollahi Sani

David Nilsson

Peter Dyreklev

Peter Andersson-Ersman

Hamberg Per

There is provided a display device, which is arranged to display a predetermined fixed image, having a pixel electrode layer comprising a plurality of pixel portions, and opaque solidified electrolyte arranged in a plurality of separated segments in ionic contact with a respective pixel portion, wherein each electrolyte segment and respective pixel portion form a pixel element. The fixed image display further comprises at least one continuous electrode layer extending across at least two rows and two columns of the pixel matrix, and is connected to the electrolyte segments of a subset of the pixel elements. Upon application of an electric potential difference between the patterned electrode layer and the pixel electrode layer, the pixel portions of the subset of the pixel elements switch color.

Fixed image display device and method of manufacturing the same

A moisture sensor, for measuring moisture in a building without leaving visible scars to the building surface, is provided. The moisture sensor includes a flexible carrier carrying an antenna for receiving EM-radiation between 9 kHz and 11 MHz and a resonant circuit including a moisture reactive element. The moisture reactive element includes a hygroscopic electrolyte arranged between a first and a second electrode, wherein the electrolyte in the presence of moisture forms mobile ions and provides a complex impedance at least in response to the alternating voltage, which complex impedance varies with the moisture content of the electrolyte.

Moisture sensor

In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.

Card-like memory unit with separate read/write unit

A fast organic field effect transistor (), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte () between the gate electrode () and the organic semiconductor layer (), which electrolyte () has a dissociation constant of at least 10&#x2212;8. Said organic semiconductor layer () is in contact with the source electrode () and the drain electrode () of the transistor. In operation a potential () applied to said gate electrode () controls the current A between said source electrode () and said drain electrode ().

Transistor with large ion-complexes in electrolyte layer

In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface on this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.

Organic electronic circuit and method for making the same

In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.

Bimodal operation of ferroelectric and electret memory cells and devices

An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.

Organic electronic device and methods for manufacturing a device of this kind

In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.

Method for operating a passive matrix-addressable ferroelectric or electret memory device

In a memory and/or data processing device having at least two stacked layers which are supported by a substrate or forming a sandwiched self-supporting structure, wherein the layers include memory and/or processing circuitry with mutual connections between the layers and/or to circuitry in the substrate, the layers the are mutually arranged such that contiguous layers form a staggered structure on at least one edge of the device and at least one electrical edge conductor is provided passing over the edge on one layer and down one step at a time, enabling the connection to an electrical conductor in any of the following layers in the stack. A method for manufacturing a device of this kind includes the steps for adding the layers successively, one layer at a time, such that the layers form a staggered structure, and for providing one or more layers with at least one electrical contact pad for linking to one or more interlayer edge connectors.

Vertical electrical interconnections in a stack

A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.

Addressing of memory matrix

In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the electrode arrangement is made as a two-layer structure, where the first layer is a conducting or semiconducting material or a combination thereof deposited on a substrate and a second layer is a conducting polymer with a work function higher than that of the material in the first layer. A third layer consisting of semiconducting organic material and forming the active material of the device is deposited on the top of the anode, and the cathode made of a fourth layer of a metal deposited on a third layer. In a preferred embodiment a low work function metal is used in the first layer, a doped conjugated polymer such as PEDOT-PSS in the second layer, while the cathode may be formed of the same metal as used in the first layer. Use in the manufacturing of the electrode arrangement in an organic thin-film diode or in a transistor structure.

Method in the fabrication of organic thin-film semiconducting devices

The optoelectrical components which up to now have been used in the fibre-optical region have had waveguides of quartz and glass with hermetic encapsulating, which components have had too high manufacturing costs for profitable use. Through making polymeric single mode (SM) waveguides from plastic, for example, benzocyclobutene polymer (BCB) a simple reliable and inexpensive concept for making waveguides can be obtained. Two of the commercially available grades of BCB/DOW Chemicals have furthermore a refractive index difference which permits manufacturing of buried waveguides with SM characteristics. These two types of BCB material have shown themselves to be especially usable for manufacturing of so-called buried SM waveguides: a heat curable grade (1,4) used for under- and over-cladding for waveguides and a photo-definable derivative (3) used as the waveguide material. Encapsulating of a waveguide chip can in this way be made with plastics, at the same time as the connector interface can be formed in the end surfaces of the components.

Method for manufacturing an optoelectrical component and an

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Linköping, Sweden

Göran Gustafsson