Innogrit Technologies Co., Ltd.

Goyo Chiang

Youngjoon Choi

A method for finding a common optimal read reference voltage of multi-dies and a storage system includes: obtaining voltage distributions of each block in the multi-dies at different read and write temperatures and/or different P/E cycles; determining optimal read reference voltages for all blocks in the multi-dies; obtaining the number of blocks corresponding to different optimal read reference voltages according to the optimal read reference voltages of all blocks in the multi-dies; and selecting the optimal read reference voltage with the most occurrences as the common optimal read reference voltage according to the number of blocks corresponding to the different optimal read reference voltages.

Method for finding common optimal read reference voltage of multi-dies, storage system

This application relates to the technical field of data storage, and discloses a method for finding a common optimal reference voltage and a memory storage-system. The method includes: providing a lookup table for optimal reference voltage offset of each programmed state of target memory and a 1-bit count difference voltage offset corresponding to predetermined 1-bit count index at different time intervals; when there is a NAND device of a memory storage system with UECC or bit error rate exceeding criteria, detecting current 1-bit count difference voltage offset corresponding to the predetermined 1-bit count index, and obtaining optimal reference voltage offset in the lookup table with the current 1-bit count difference voltage offset as index; and applying the corresponding reference voltage offset to initial common reference voltage of all NAND devices of the memory storage system. This application can accurately adjust the reference voltage.

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Shanghai, China

Goyo Chiang