Gigaphoton Inc.

Gouta Niimi

Toshihiro Nishisaka

Yukio Watanabe

Georg Soumagne

Atsushi Ueda

Koichiro Koge

Takayuki Osanai

Yusuke Hoshino

An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.

Extreme ultraviolet light generation apparatus and electronic device manufacturing method

A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

Tin trap device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method

Growing community of inventors

Oyama, Japan

Gouta Niimi