Tdk Electronics Ag

Tdk Corporation

Epcos Ag

Goushi Tauchi

Tomoya Imura

Masakazu Hirose

Tomohiro Terada

Masahito Furukawa

Daisuke Tanaka

Tomohisa Azuma

Hideaki Sone

A multi-layer ceramic capacitor is disclosed. In an embodiment the dielectric composition includes a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a low-Bi phase in which a Bi concentration is no greater than 0.8 times the mean Bi concentration in the dielectric composition as a whole.

Multi-layer ceramic capacitor

A dielectric composition, a dielectric element, an electronic component and a laminated electric component are disclosed. In an embodiment a dielectric composition has a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a high-Bi phase in which the Bi concentration is at least 1.2 times the mean Bi concentration in the dielectric composition as a whole.

Dielectric composition, dielectric element, electronic component and laminated electric component

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition has a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes at least one selected from among La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg and Zn, wherein the dielectric composition includes specific particles having a core-shell structure that has at least one core portion including SrTiO, and wherein &#x3b1;&#x3c;0.20, where &#x3b1; is the ratio of the number of specific particles with respect to the total number of particles contained in the dielectric composition.

Dielectric composition, dielectric element, electronic component and laminated electronic component

A dielectric composition, a dielectric element, an electronic component and a multi-layer electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein at least some of the particles have a core-shell structure including a core portion and a shell portion and wherein the content of Bi present in the core portion is at least 1.2 times the content of Bi present in the shell portion.

Dielectric composition, dielectric element, electronic component and multi-layer electronic component

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein the content of the at least one element selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg or Zn is between 0.5 molar parts and 11.1 molar parts, taking the Ti content of the dielectric composition as 100 molar parts, wherein 0.17&#x2264;&#x3b1;&#x2264;2.83, where &#x3b1; is the molar ratio of Bi with respect to Sr in the dielectric composition, and wherein at least some of the particles include a high-Bi phase having a Bi concentration of at least 1.2 times the mean Bi concentration of the dielectric composition as a whole.

A dielectric composition, a dielectric element, an electronic component and a multi-layer electronic component are disclosed. In an embodiment the dielectric composition includes a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes at least one selected from among La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg and Zn, wherein the dielectric composition includes specific particles having a core-shell structure that has at least one core portion including SrTiOand wherein &#x3b1; is set to 0.20&#x2264;&#x3b1;&#x2264;0.70, where &#x3b1; is the ratio of the number of specific particles with respect to the total number of particles contained in the dielectric composition.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment a dielectric composition includes particles comprising a perovskite crystal structure including at least Bi, Na, Sr and Ti and at least one element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg and Zn, wherein a content of the element is between 0.5 molar pails and 11.1 molar parts, defining a Ti content of the dielectric composition as 100 molar parts, wherein 0.17&#x2264;&#x3b1;&#x2264;2.83, where &#x3b1; is a molar ratio of Bi with respect to Sr in the dielectric composition, wherein at least some of the particles include a low-Bi phase, and wherein a total surface area of the low-Bi phase within the particles is between 0.1% and 15% of the total surface area of the particles.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein at least some of the particles have a core-shell structure including a core portion and a shell portion, and wherein the content of Bi present in the core portion is no greater than 0.83 times the content of Bi present in the shell portion.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In various embodiment, the dielectric composition includes a main component represented by (BiNaSrLn)TiO, wherein Ln is at least one element selected from the group consisting of: La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Yb, and wherein a, b, c and d satisfy the following: 0&#x3c;a&#x3c;0.50, 0&#x3c;b&#x3c;0.50, 0&#x3c;c&#x2264;0.80, 0&#x3c;d&#x2264;0.20, and 0.90&#x2264;a+b+c+d&#x2264;1.05.

The aim of the present invention lies in providing a dielectric composition which has a relatively high dielectric constant of 800 or greater, and which has relatively low dielectric loss of 4% or less when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. A dielectric composition having a main component represented by (BiNaSrBa) (&#x3b1;Ti)O, characterized in that a is at least one selected from Zr and Sn; and a, b, c, d and x satisfy the following: 0.140&#x2266;a&#x3c;0.390, 0.140&#x2266;b&#x3c;0.390, 0.200&#x2266;c&#x3c;0.700, 0.020&#x2266;d&#x3c;0.240, 0.020&#x2266;x&#x3c;0.240 and 0.950&#x3c;a+b+c+d&#x2266;1.050.

[Problem] The problem addressed lies in providing a dielectric composition having a relatively high dielectric constant of 900 or greater when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. [Solution] A dielectric composition in which the composition of the main component is in accordance with the following formula (1): (BiNaSr)(ZnTi)03 (1) [where a, b, c and d satisfy the following: 0.09&#x2266;a&#x2266;0.58, 0.09&#x2266;b&#x2266;0.42, 0.05&#x2266;c&#x2266;0.84, 0&#x2266;d&#x2266;0.08, and 0.95&#x2266;a+b+c&#x2266;1.05].

The problem addressed lies in providing a dielectric composition having a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/&#x3bc;m is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. [Solution] A dielectric composition in which the composition of the main component is in accordance with the following formula (1): (BiNaSr)(MgTi)O(1) [where a, b, c and d satisfy the following: 0.10&#x2266;a&#x2266;0.65, 0&#x3c;b&#x2266;0.45, 0&#x3c;c&#x2266;0.85, 0&#x3c;d&#x3c;0.20, and 0.95&#x2266;a+b+c&#x2266;1.05].

To provide a dielectric ceramic composition having a high dielectric constant, i.e., 3,000 or more, at elevated temperatures at or above 150&#xb0; C. and having a practically sufficient relative dielectric constant at an applied DC electric field of 2 V/&#x3bc;m, and to provide a dielectric device including such a dielectric ceramic composition, a dielectric ceramic composition is a composite oxide represented by formula (1):{[(BiNa)(BiK)Ba]Na}TiNbO&#x2003;&#x2003;(1)where a, b, c, d, s, t, u, v, and x are numbers satisfying the following conditions:

Dielectric ceramic composition and dielectric device

The present invention relates to a dielectric ceramic composition which is complex oxides represented by the following formula (1), {[(BiNa)(BiK)Ba]A}TiNbO(1), wherein, in formula (1), A represents at least one element selected from the group consisting of Li, Na and K, and a, b, c, d, s, t, u, v and x are numbers respectively satisfying the following formulae, 0.10&#x2266;a&#x2266;0.95, 0.00&#x3c;b&#x2266;0.85, 0.05&#x2266;c&#x2266;0.70, a+b+c=1, 0.10&#x2266;d&#x2266;0.50, 0.90&#x2266;s+u&#x2266;1.00, 0.45&#x2266;t&#x2266;0.50, 0.45&#x2266;v&#x2266;0.50 and 0.95&#x2266;x&#x2266;1.05.

Dielectric ceramic composition and dielectric element

According to a preferred embodiment, the piezoelectric ceramic includes a complex oxide having the composition represented by formula (1) or (2), and Mn at 0.2-1.2 mass % or 0.2-3 mass %, respectively, in terms of MnCO.(PbA)TiZr(ZnA)(YbA)SnO&#x2003;&#x2003;(1)(PbA)TiZr(ZnA)SnO&#x2003;&#x2003;(2)[In formula (1), Arepresents at least one element selected from the group consisting of Ca, Sr and Ba, and Ais at least one element selected from the group consisting of Nb, Ta and Sb, and includes at least Nb. In formula (2), Arepresents at least one element selected from among Ca, Sr and Ba, Arepresents at least one element selected from among Nb and W, and Aincludes at least Nb.]

Growing community of inventors

Tokyo, Japan

Goushi Tauchi