Kabushiki Kaisha Toshiba

Gou Ninomiya

Toshiharu Obu

Kazuhiro Ueda

Hiroki Sekiya

Shinichi Baba

Nobumitsu Tada

Yoshiyuki Shimizu

A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

Power semiconductor module and semiconductor power converter provided with the same

To provide an inverter unit with excellent manufacturing performance and with current carrying capacity increased and size reduced by further increasing the cooling efficiency of a power efficiency device. The inverter unit includes: a semiconductor chip constituting an arm of an inverter; a first conductorjoined to a positive side of the semiconductor chip; and a second conductorjoined to a negative side of the semiconductor chip. The first and second conductors are disposed above a coolercooling the semiconductor chip so that a joint surface of the first conductorwhich is joined to a positive electrode of the semiconductor chip and a joint surface of the second conductorwhich is joined to a negative electrode of the semiconductor chip are not in parallel to a surface of the cooler

Inverter unit

Growing community of inventors

Kawasaki, Japan

Gou Ninomiya