Infineon Technologies Ag

Siemens Aktiengesellschaft

Osram Opto Semi-conductors Gmbh Co. Ohg

Gottfried Landwehr

Frank Fischer

Thomas Litz

Hans-J&uuml;rgen Lugauer

Andreas Waag

Markus Keim

G&uuml;nter Reuscher

Thierry Baron

Ulrich Zehnder

Hans-Peter Steinbr&uuml;ck

Mario Nagelstrasser

Gunter Reuscher

Hans-Jurgen Lugauer

Matthias Keller

An Optoelectronic semiconductor component, in which an active zone is disposed above a semiconductor substrate, and which zone is disposed between at least one first resonator mirror layer and at least one second resonator mirror layer. The first and the second mirror layer each have a semiconductor material of a first conductivity type. At least one first heavily doped junction layer of the first conductivity type and at least one second heavily doped junction layer of a second conductivity type are disposed between the active zone and one of the two mirror layers in such a way that the second heavily doped, degenerate junction layer lies between the active zone and the first heavily doped, degenerate junction layer.

Optoelectronic semiconductor component

A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate of GaAs, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer including a beryllium-containing chalcogenide.

Opto-electronic component made from II-VI semiconductor material

A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.

Method of producing a II-VI semiconductor component containing selenium and/or sulrfur

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be&mdash;Se configuration.

II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction

A semiconductor laser component includes a semiconductor body with an SCH configuration which is suitable for generating an electromagnetic radiation and in which an active layer sequence with a quantum well structure is provided between a first outer cover layer of a first conductivity type and a second outer cover layer of the first conductivity type. A first denatured transition layer of a second conductivity type and a second denatured transition layer the first conductivity type are provided between the active layer sequence and the second outer cover layer.

Semiconductor laser component

Component having an active layer (,), barrier layers (,), and, if appropriate, a buffer layer (,), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate (,) of Gaps, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer (,) including a beryllium-containing chalcogenide.

An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.

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Würzburg, Germany

Gottfried Landwehr