Asml Netherlands B.v.

Other

Gosse Charles De Vries

Han-Kwang Nienhuys

Edwin Johan Buis

Erik Roelof Loopstra

Jan Bernard Plechelmus Van Schoot

Vadim Yevgenyevich Banine

Pieter Willem Herman De Jager

Andrey Alexandrovich Nikipelov

Olav Waldemar Vladimir Frijns

Wouter Joep Engelen

Rilpho Ludovicus Donker

Leonardus Adrianus Gerardus Grimminck

Johannes Antonius Gerardus Akkermans

Teis Johan Coenen

Koen Van Ingen Schenau

Petrus Rutgerus Bartraij

Andelko Katalenic

Franciscus Johannes Joseph Janssen

Sven Antoin Johan Hol

Ramon Pascal Van Gorkom

Jim Vincent Overkamp

Michael Jozef Mathijs Renkens

Borgert Kruizinga

Marinus Johannes Maria Van Dam

Fidelus Adrianus Boon

Erik Maria Rekkers

Sjoerd Nicolaas Lambertus Donders

Christiaan Alexander Hoogendam

Nicolaas Ten Kate

Raymond Wilhelmus Louis Lafarre

Frits Van Der Meulen

Harmen Klaas Van Der Schoot

Christian Wagner

David Ferdinand Vles

Adrianus Hendrik Koevoets

Uwe Mickan

Sander Catharina Reinier Derks

Hako Botma

Martinus Agnes Willem Cuijpers

Wilhelmus Patrick Elisabeth Maria Op 't Root

Alexey Olegovich Polyakov

Evgenia Kurganova

Tamara Druzhinina

Nicolaas Aldegonda Jan Maria Van Aerle

Koos Van Berkel

Christiaan Louis Valentin

Hermanus Johannes Maria Kreuwel

Jacobus Cornelis Gerardus Van Der Sanden

Hendrikus Herman Marie Cox

Otger Jan Luiten

Stan Henricus Van Der Meulen

Jan Van Schoot

Alain Louis Claude Leroux

Ronald Cornelis Gerardus Gijzen

Patrick Willem Paul Limpens

Dries Vaast Paul Hemschoote

Erik Johan Arlemark

Sonia Castellanos Ortega

Pieter De Jager

Joost De Hoogh

Olivier Christian Maurice Lugier

Paul Comé Henri De Wit

Evert Auke Rinze Westerhuis

Lucas Johannes Peter Ament

Vladimir Litvinenko

Wilhelmus Patrick Elisabeth Maria Op'T Root

Sven Hol

Marinus Van Dam

Petrus Bartraij

Leonardus Grimminck

Lucas Ament

Franciscus Janssen

Olav Frijns

Michael Renkens

Johannes Akkermans

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

Method and apparatus for forming a patterned layer of material

A radiation system includes a beam splitting apparatus configured to split a main radiation beam into a plurality of branch radiation beams and a radiation alteration device arranged to receive an input radiation beam and output a modified radiation beam, wherein the radiation alteration device is configured to provide an output modified radiation beam which has an increased etendue, when compared to the received input radiation beam, wherein the radiation alteration device is arranged such that the input radiation beam which is received by the radiation alteration device is a main radiation beam and the radiation alteration device is configured to provide a modified main radiation beam to the beam splitting apparatus, or wherein the radiation alteration device is arranged such that the input radiation beam which is received by the radiation alteration device is a branch radiation beam output from the beam splitting apparatus.

Radiation system

A lithographic apparatus arranged to project a pattern from a patterning device onto a substrate, comprising at least one housing comprising at least one internal wall, at least one optical component arranged within at least one chamber defined at least in part by the at least one internal wall and configured to receive a radiation beam and a cooling apparatus arranged to cool at least a portion of the at least one internal wall to a temperature below that of the at least one optical component.

Lithographic apparatus and cooling method

A beam-splitting apparatus arranged to receive an input radiation beam and split the input radiation beam into a plurality of output radiation beams. The beam-splitting apparatus comprising a plurality of reflective diffraction gratings arranged to receive a radiation beam and configured to form a diffraction pattern comprising a plurality of diffraction orders, at least some of the reflective diffraction gratings being arranged to receive a 0diffraction order formed at another of the reflective diffraction gratings. The reflective diffraction gratings are arranged such that the optical path of each output radiation beam includes no more than one instance of a diffraction order which is not a 0diffraction order.

Beam splitting apparatus

A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table, the lithographic apparatus further comprising a cooling apparatus for cooling the substrate, wherein the cooling apparatus comprises a cooling element located above the substrate table and adjacent to the exposure area, the cooling element being configured to remove heat from the substrate.

Lithographic apparatus

A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

Beam delivery apparatus and method

A radiation alteration device includes a continuously undulating reflective surface, wherein the shape of the continuously undulating reflective surface follows a substantially periodic pattern.

An apparatus () for adjusting an intensity of radiation. The apparatus comprises a grating () for receiving a radiation beam (B) and for directing at least a portion of the radiation beam in a first direction in the form of a first reflected radiation beam (B), and one or more first actuators operable to rotate the grating to adjust a grazing angle between the radiation beam and a surface of the grating so as to vary an intensity of the reflected radiation beam.

Attenuation apparatus and method

A reflector () comprising a plate () supported by a substrate (), wherein the plate has a reflective surface () and is secured to the substrate by adhesive free bonding, and wherein a cooling channel array () is provided in the reflector. The channels () of the cooling channel array may be formed from open channels in a surface of the substrate, the open channels being closed by the plate to create the channels.

Reflector

A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

Electron injector and free electron laser

A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

Lithographic method

An actuator to displace, for example a mirror, provides movement with at least two degrees of freedom by varying the currents in two electromagnets. A moving part includes a permanent magnet with a magnetic face constrained to move over a working area lying substantially in a first plane perpendicular to a direction of magnetization of the magnet. The electromagnets have pole faces lying substantially in a second plane closely parallel to the first plane, each pole face substantially filling a quadrant of the area traversed by the face of the moving magnet. An optical position sensor may direct a beam of radiation at the moving magnet through a central space between the electromagnets. The sizes of facets in a pupil mirror device may be made smaller in a peripheral region, but larger in a central region, thereby relaxing focusing requirements.

Actuation mechanism, optical apparatus, lithography apparatus and method of manufacturing devices

An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.

An EUV optical apparatus includes a number of adjustable mirrors () on mirror bodies (). Each mirror body is supported on an actuator () comprising a moving part () and a fixed casing part (). The actuator provides a resilient support () for the mirror body so that it is tiltable with two degrees relative to the casing. An electromagnetic motor (-) applies first part, under the influence of an applied motive force, the resilient mounting being arranged to provide a biasing force that resists said motive force. A magnetic coupling () is arranged between the moving and fixed parts so as to provide a counter-biasing force. The counter-biasing force partly opposes said biasing force and thereby reduces the motive force required to effect a given displacement. The actuator can thus be made with reduced size, weight and heat dissipation.

In an EUV (extreme ultraviolet) lithography apparatus, an illumination system includes a multifaceted field mirror and a multifaceted pupil mirror. A field facet mirror within mirror focuses EUV radiation onto a particular associated pupil facet mirror, from where it is directed to a target area. Each field facet mirror is modified to scatter unwanted DUV (deep ultraviolet) radiation into a range of directions. The majority of DUV falls onto neighboring pupil facet mirrors within the pupil mirrors, so that the amount of DUV radiation reaching target E is suppressed in comparison to the wanted EUV radiation. Because the distance between mirrors is much greater than the width of an individual pupil facet mirror, good DUV suppression can be achieved with only a narrow scattering angle. Absorption of EUV radiation in the scattering layer can be minimized.

Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices

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Veldhoven, Netherlands

Gosse Charles De Vries