The Secretary of State for Defence in Her Britannic Majesty's Government

Gordon Robert Jones

Robin F Farrow

Norman Shaw

Michael Richard Houlton

Philip W Sullivan

An FET device comprises a substrate with source and drain regions separated by a gate structure. Between the gate and substrate is an insulator formed of a cubic fluorite structure material that is lattice matched within 1% to the substrate. The insulator may be a group II fluoride such as Ca.sub.y Cd.sub.1-y F.sub.2 (0.ltoreq.y.ltoreq.1), Sr.sub.z Ba.sub.1-z F.sub.2 (0.ltoreq.z.ltoreq.1), or Ba.sub.x Ca.sub.1-x F.sub.2 (0.ltoreq.x.ltoreq.1), or an oxide such as CeO.sub.2, PbO.sub.2. The substrate may be a bulk semiconductor or an epitaxial layer such as Si, InP, GaAs, Ga.sub.x Al.sub.1-x As, GaSb, InAs, or AlAs.

Field effect transistor with gate insulation of cubic fluoride material

A novel pyroelectric material is provided by doping lead germanate with barium to provide the composition Pb.sub.5-x Ba.sub.x Ge.sub.3 O.sub.11 0&lt;x.ltoreq. 0.5. The material has a pyroelectric coefficient comparable to that of triglycine sulphate (TGS).

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Malvern, United Kingdom

Gordon Robert Jones