Other

Celestech, Inc.

Saint-gobain/norton Industrial Ceramics Corporation

Technion, Incorporated

Norton Company

Gordon L Cann

Louis K Bigelow

Grant Lu

Cecil B Shepard, Jr

Frank X McKevitt

Matthew A Simpson

Robert M Frey

Kevin J Gray

Cecil B Shephard, Jr

Diamond film with substantially no non-diamond carbon and a high thermal conductivity is deposited by means of a direct current arc jet apparatus with a substrate temperature below about 975 degrees Celsius, an arc power of between about 20 and 40 kw. A pressure of about 12 torr, and an enthalpy greater than 30 from a activated gas jet fed with hydrogen and methane, the methane being supplied at a concentration of less than 0.07%. The resulting material has a high transparency and thermal conductivity. Also disclosed is the use of the diamond material made by the present method for cutting tool applications, particularly milling.

Method of making white diamond film

The process is an arc jet CVD diamond deposition process with very low methane, less than 0.07%, and the addition of water. The resulting material has is characterized by a narrow Raman peak, a relatively large lattice constant, and a charge carrier collection distance of at least 25 microns.

CVD diamond radiation detector

Diamond film with substantially no non-diamond carbon and a high thermal conductivity is deposited by means of a direct current arc jet apparatus with a substrate temperature below about 975 degrees Celsius, an arc power of between about 20 and 40 kw. a pressure of about 12 torr, and an enthalpy greater than 30 from a activated gas jet fed with hydrogen and methane, the methane being supplied at a concentration of less than 0.07%. The resulting material has a high transparency and thermal conductivity. Also disclosed is the use of the diamond material made by the present method for cutting tool applications, particularly milling.

The process is an arc jet CVD diamond deposition process with very low methane, less than 0.07%, and the addition of water. The resulting material has is characterized by a narrow Raman peak, a relatively large lattice constant, and a charge carrier collection distance of at least 25 microns. Also disclosed is a particle detector device which makes use of the diamond material according to the invention.

A multi-layer diamond film is grown by d.c. arc assisted plasma deposition. A series of layers are deposited on each other by periodically back-etching the surface and renucleating during deposition. There may also be deposited a thin layer of non-diamond carbon material between the diamond layers, but no other non-carbon material. Renucleation is controlled by varying the proportion of methane to hydrogen in the feed gases, by temperature cycling of the substrate, or by inducing modal changes in the arc.

Multi-layer superhard film structure

The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.

Apparatus and method for plasma deposition

Apparatus for plasma deposition

The disclosure is directed to a method for depositing a substance, such as synthetic diamond. A plasma beam is produced, and contains the constituents of the substance to be deposited. A substrate is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substance is deposited on the surface. The substrate, the beam, or both can be moved. Spinning of the substrate, with the beam non-concentric thereon, is one of the disclosed techniques.

Method for plasma jet deposition

In a first embodiment of an improved diamond deposition cell, a chamber is evacuated to a low pressure and a graphite element in the chamber is heated to a selected high temperature and heats a substrate positioned within the chamber spaced by a selected gap from the graphite body to a selected lower temperature. Hydrogen or a mixture of hydrogen and hydrocarbon gas is admitted to the chamber and part of the hydrogen reacts with the hot graphite body to form atomic hydrogen and hydrocarbon gasses. Hydrogen and hydrocarbon gasses cycle repeatedly across the gap between the facing surfaces of the body and the substrate in the kinetic regime resulting in a net transfer of carbon to the substrate and its deposition as diamond crystals or film on the substrate. In a second embodiment, the graphite body is heated by combusting gasses in a cavity therein. Products of such combustion, hydrogen and, optionally, additional hydrocarbon gas are admitted to the gap between the surfaces of the graphite body and the substrate. The temperatures of the facing surfaces, the pressure in the gap and the ratio of the constituent gasses results in carbon atoms being deposited on the substrate in the form of diamond film and other carbon products.

Diamond deposition cell

Method for plasma deposition on apertured substrates

A thruster assembly is disclosed which includes a removable filament mounted in a heat exchange cavity which isolates propellant from the filament and transfers energy from the filament to the propellant. The filament may comprise a single winding of wire or may, if desired, comprise a bifilar wound helix. Also disclosed are a number of ways of powering the filament including a plurality of power supplies provided for redundancy as well as variability of operation. The thruster assembly housing includes sophisticated heat conduction structure including a tortuous internal heat conduction path which minimizes heat loss from the thruster for a variety of disclosed purposes. Also disclosed is structure for providing energy transfer to propellant both through radiation and emission. Several techniques for improving the performance of the thruster assembly and particularly related to the nozzle structure as well as to the fuel supply structure and heat exchange structure form the main basis for this disclosure. Further, a test bed facility for testing the inventive thruster assembly is set forth.

Performance improvements in thruster assembly

A thruster assembly is disclosed which includes a removable filament mounted in a heat exhange cavity which isolates propellent from the filament and transfers energy from the filament to the propellant. The filament may comprise a single winding of wire or may if desired comprise a bifilar wound helix. Also disclosed are a number of ways of powering the filament including a plurality of power supplies provided for redundancy as well as variability of operation. The thruster assembly housing includes sophisticated heat conduction structure including a tortuous internal heat conduction path which minimizes heat loss from the thruster for a variety of disclosed purposes. Also disclosed is structure for providing energy transfer to propellant both through radiation and emission. Further, a test bed facility for testing the inventive thruster assembly is set forth.

Radiation transfer thrusters for low thrust applications

Embodiments of magnetoplasmadynamic processors are disclosed which utilize specially designed cathode-buffer, anodeionizer and vacuum-insulator/isolator structures to transform a working fluid into a beam of fully ionized plasma. The beam is controlled both in its size and direction by a series of magnets which are mounted in surrounding relation to the cathode, anode, vacuum insulator/isolators and plasma beam path. As disclosed, the processor may be utilized in many diverse applications including the separation of ions of differing weights and/or ionization potentials and the deposition of any ionizable pure material. Several other applications of the processor are disclosed.

Growing community of inventors

Laguna Beach, CA, United States of America

Gordon L Cann