Mks Instruments, Inc.

Energetiq Technology, Inc.

Gordon Hill

Scott Benedict

Vladislav Davidkovich

Andrew Cowe

Kevin Wenzel

Ron Collins

Ali Shajii

Siddharth P Nagarkatti

Paul D Lucas

David Brian Chamberlain

Donald K Smith

Junhua Ding

Matthew Mark Besen

Michael L'Bassi

Huiling Zhu

Ilya Pokidov

Chiu-Ying Tai

David C Neumeister

Hongke Ye

Jaroslaw Wojciech Pisera

Michael Harris

David F Broyer

Bradly Raymond Lefevre

David J Goldman

Daniil Stolyarov

Martin Ryan

Dave Chamberlain

Larry Bourget

Joseph Desjardins

Paul Lucas

A plasma apparatus of a plasma processing system is provided. The plasma apparatus defines a toroidal plasma channel and includes multiple end blocks defining respective portions of the toroidal plasma channel. Each end block includes an end-block tube constructed from a first electrically conductive material and a dielectric coating disposed on an interior surface of the end-block tube. The plasma apparatus also includes multiple mid-blocks defining respective portions of the toroidal plasma channel. Each mid-block includes at least one heat sink located adjacent to a substantially linear tube with a thermal interface disposed therebetween. The thermal interface is in physical communication with the tube and the at least one heat sink. The mid-block tube has a substantially uniform wall thickness and is constructed from a dielectric material. The at least one heat sink is constructed from a second electrically conductive material.

Method and apparatus for plasma ignition in toroidal plasma sources

A plasma source is provided that is configured to form a section of a wall of a vacuum component. The plasma source comprises a body including a dielectric member, a first surface exposed to an exterior region of the vacuum component, and a second surface exposed to an interior region of the vacuum component. The plasma source also comprises at least one electrode disposed in a receiving channel of the body with at least a portion of the dielectric member located adjacent to the at least one electrode in the receiving channel. The plasma source further comprise at least one discharge region adjacent to the receiving channel within the body. The at least one discharge region is exposed to the interior region of the vacuum component via an opening on the second surface of the body.

Method and apparatus for plasma generation

An isolation valve assembly including a valve body having an inlet and an outlet. The isolation valve includes a seal plate disposed within an interior cavity of the valve body. The seal plate is movable between a first position allowing gas flow from the inlet to the outlet, and a second position preventing gas flow from the inlet to the outlet. The isolation valve includes a closure element disposed within the valve body. The closure element is configured to retain the seal plate stationary in the first position or the second position. The closure element includes a first sealing element positioned adjacent to a first surface of the seal plate. A working surface of the first sealing element is substantially obscured from the gas flow when the seal plate is stationary.

Valve apparatuses and related methods for reactive process gas isolation and facilitating purge during isolation

A method is provided for cleaning of a processing system comprising a wafer processing chamber and a pumping line in fluid connection with the wafer processing chamber. The method includes initiating cleaning of the wafer processing chamber by activating a chamber cleaning source and initiating cleaning of at least a portion of the pumping line by activating a foreline cleaning source coupled to the pumping line. The method also includes monitoring, at a downstream endpoint detector coupled to the pumping line, a level of a signature substance. The method further includes determining, by the downstream endpoint detector, at least one of a first endpoint of the cleaning of the wafer processing chamber or a second endpoint of the cleaning of the pumping line based on the monitoring.

Endpoint detection of deposition cleaning in a pumping line and a processing chamber

A plasma source is provided that includes a body defining an input port, an output port, and at least one discharge section extending along a central longitudinal axis between the input port and the output port. The at least one discharge section includes a return electrode defining a first generally cylindrical interior volume having a first interior diameter, a supply plate comprising a supply electrode, the supply plate defining a second generally cylindrical interior volume having a second interior diameter, and at least one spacer defining a third generally cylindrical interior volume having a third interior diameter. The third interior diameter is different from the first or second interior diameter. The at least one discharge section is formed from the spacer arranged between the return electrode and the supply plate along the central longitudinal axis to define a generally cylindrical discharge gap for generating a plasma therein.

Calibration of a valve in a vacuum system and providing a diagnostic indication in the vacuum system using the calibration includes measuring conductance of the valve as a function of angular valve position and generating a conductance calibration map or function for use during operation of the valve. An actual angular valve position is set based on the received set point angular valve position and a difference between the measured valve conductance and a predefined metric of conductance versus angular valve position. An actual system conductance and a difference between the actual system conductance and a reference system conductance for the system are determined. The diagnostic indication of a fault in the system is generated based on the actual angular valve position of the valve and the difference between the actual system conductance and the reference system conductance for the system.

Predictive diagnostics systems and methods using vacuum pressure control valves

A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode. The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier discharge structure is adapted to generate a plasma in the generally cylindrical interior volume.

Method and apparatus for deposition cleaning in a pumping line

A cooled isolation valve includes a valve body, a stationary element coupled to the valve body, and a movable closure element movable with respect to the stationary element between a closed position in which the movable closure element and the stationary element are brought together and an open position. One of the movable closure element and the stationary element includes a sealing element. In the closed position of the movable closure element, the sealing element provides a seal between the movable closure element and the stationary element. A fluid channel is formed in contact with the movable closure element and movable with the movable closure element with respect to the stationary element, such that a fluid in the fluid channel effects heat transfer in the movable closure element. A bellows of the isolation valve can include a metallic substrate with a ceramic coating.

Actively cooled vacuum isolation valve

A method is provided for cleaning a pumping line having a plurality of inline plasma sources coupled thereto. The method includes supplying a cleaning gas to the pumping line from a wafer processing chamber connected to the pumping line. The method also includes generating a localized plasma at one or more of the plurality of inline plasma sources using the cleaning gas flowing in the pumping line. Each localized plasma is adapted to clean at least a portion of the pumping line. The method further includes determining one or more impedances of the localized plasma at the one or more inline plasma sources and monitoring the one or more impendences to detect an endpoint of the cleaning.

A fluid control system for pulse delivery of a fluid include a flow channel, an isolation valve to initiate and terminate a pulse of fluid from the flow channel, and a pulse mass flow controller (MFC). The MFC includes a control valve to control flow of fluid in the flow channel, a flow sensor to measure flow rate in the flow channel, and a controller to control flow of fluid through the control valve and switching of the isolation valve, to control a mass of fluid delivered during the pulse of fluid. Controlling the flow of fluid through the control valve can be based on feedback from the flow sensor during the pulse initiated and terminated by the isolation valve.

Method and apparatus for pulse gas delivery with isolation valves

A valve assembly is provided that comprises a vacuum valve including a body and an electrically grounded surface on at least a surface of the body and an electrode extending substantially parallel to the electrically grounded surface and adjacent to the vacuum valve. The vacuum valve assembly also includes a barrier dielectric, a least a portion of which is located between the electrode and the electrically grounded surface. The vacuum valve assembly further includes a dielectric barrier discharge structure formed from the electrically grounded surface, the electrode, and the barrier dielectric. The dielectric barrier discharge structure is adapted to generate a plasma on the electrically grounded surface to clean at least a portion of the vacuum valve.

Method and apparatus for valve deposition cleaning and prevention by plasma discharge

A valve assembly having a valve housing, the valve housing defining a passageway. A flapper valve arranged within the passageway is coupled to a rotatable valve shaft. A flexible wall, sealed along opposed edges to the valve housing, is controllable to at least two positions. The first position seals against the flapper valve and the second position releases the flapper valve allowing for ready movement of the valve.

Radial sealing butterfly valve

A valve assembly comprises: a valve body including a passageway through which a first gas can be transmitted through the valve assembly; a valve flow control element movable relative to the valve body between an opened position wherein flow through the passageway is at a maximum flow, and a closed position wherein flow through the passageway is at a minimum flow, the valve flow control element is shaped so that a control gap is provided between the valve body and valve flow control element through which the first gas can flow, and the dimensions of the control gap vary depending on the position of the valve flow control element relative to the valve body; and a gas injector arrangement for selectively injecting a second gas into the control gap when the valve assembly is used to control the flow of the first gas through the passageway. The injection of the second gas when the valve flow control element is at or near its closed position helps minimize condensate being deposited on the valve flow control element, as well as reduce the closed conductance of the valve.

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Arlington, MA, United States of America

Gordon Hill