Motorola Corporation

Gordon D Bitko

David Joseph Monk

Bishnu Prasanna Gogoi

Andrew C McNeil

Gary J O'Brien

Kyujin Jung

Theresa A Maudie

Dave S Mahadevan

Song Woon Kim

Bill McDonald

Selective encapsulation of a micro electro-mechanical pressure sensor provides for protection of the wire bands ( ) through encapsulation while permitting the pressure sensor diaphragm ( ) to be exposed to ambient pressure without encumbrance or obstruction. Selective encapsulation is made possible by the construction of a protective dam ( ) around the outer perimeter of a pressure sensor diaphragm ( ) to form a wire bond cavity region between the protective dam ( ) and the device housing ( ). The wire bond cavity may be encapsulated with an encapsulation gel ( ) or by a vent cap ( ). Alternatively, the protective dam ( ) may be formed by a glass frit pattern ( ) bonding a cap wafer ( ) to a device wafer ( ) and then dicing the two-wafer combination into individual dies with protective dams attached.

Micro electro-mechanical system sensor with selective encapsulation and method therefor

A non-zero temperature coefficient of offset (Tco) in a semiconductor device (5) is adjusted by reducing the amount of adhesive material used to secure a first structure to a second structure. An adhesive layer (14) used to secure a sensor die (11) to a constraint die (12) in a pressure sensor application is reduced in thickness and/or formed so that adhesive material does not completely cover the constraint die (12). The Tco is further adjusted by reducing the amount and/or patterning the adhesive layer (18) used to secure the sensor (10) to its package (16).

Temperature coefficient of offset adjusted semiconductor device and

Heater circuits (13) are placed in close proximity or integrated with connection points (12) of an integrated circuit. A connection point is an area where a wire bond or conductive bump is coupled for providing electrical interconnection external to an integrated circuit. Heater circuits (13) are polysilicon strips that form resistive heat elements. A DC voltage or a pulsed voltage is applied to the heater circuits (13) to generate a local heat at the connection points that can reach temperatures exceed 1000 degrees centigrade. The heat is localized to an area near the connection point to prevent damage to temperature sensitive material. The heater circuits (13) raise the temperature of the connection points (12) to increase bond strength of a wire bond or to reflow a conductive bump to adhere to a connection point of another substrate.

Integrated circuit pad structure with high temperature heating element

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Phoenix, AZ, United States of America

Gordon D Bitko