Dongjin Semichem Co., Ltd.

Goo Hwa Lee

Jong Dai Park

Jae Hyun Kim

Kyu Soon Shin

Jong Chul Shin

Sung Hoon Jin

Min Gun Lee

Min Sung Park

Chang Yong Park

Weoun Gyuen Moon

Gyeong Sook Cho

Jae Hong Yoo

The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.

Chemical-mechanical polishing particle and polishing slurry composition comprising same

The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.

Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film by using same

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Daegu, South Korea

Goo Hwa Lee