Asml Netherlands B.v.

Gonzalo Roberto Sanguinetti

Jean-Pierre Agnes Henricus Marie Vaessen

Nicolas Mauricio Weiss

Arie Jeffrey Den Boef

Maurits Van Der Schaar

Paul Christiaan Hinnen

Anagnostis Tsiatmas

Murat Bozkurt

Mohammadreza Hajiahmadi

Olger Victor Zwier

Samee Ur Rehman

Martijn Maria Zaal

Joannes Jitse Venselaar

Narjes Javaheri

Thomai Zacharopoulou

Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets

A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

Metrology parameter determination and metrology recipe selection

Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images () representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (&#x3bb;). Pixel values of the captured images are combined () to obtain one or more synthesized images (). A plurality of synthesized diffraction signals are extracted () from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method

A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

Method of measuring a parameter of interest, inspection apparatus, lithographic system and device manufacturing method

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Eindhoven, Netherlands

Gonzalo Roberto Sanguinetti