Shenzhen Newsonic Technologies Co., Ltd.

New Sonic Technologies, LLC

Gongbin Tang

Jie Zou

Guojun Weng

Chencheng Zhou

Lei Huang

Weiwei Hu

Jian Wang

Bo Wang

Jingyong Liu

A bulk acoustic wave (BAW) resonator includes a piezoelectric layer, a first electrode layer disposed on a first side of the piezoelectric layer and including a first electrode and an additional electrode electrically isolated from each other, a second electrode layer disposed on a second side of the piezoelectric layer and including a second electrode, one or more conductive pads disposed on the second side of the piezoelectric layer and at least including an interconnection pad electrically connected to the second electrode and the additional electrode, a carrier structure disposed on the first side of the piezoelectric layer, a cover structure disposed on the second side of the piezoelectric layer and including a cover bonding layer and a cover substrate. A first cavity is disposed between the carrier structure and the piezoelectric layer. A second cavity is disposed between the cover structure and the piezoelectric layer.

Bulk acoustic wave resonator and method for manufacturing the same

A surface acoustic wave resonator, a filter and a communication device are provided. The surface acoustic wave resonator includes a piezoelectric material layer, an interdigital transducer and a reflective electrode structure; the piezoelectric material layer includes a first region and two second regions arranged in a first direction; the interdigital transducer is located at a side of the piezoelectric material layer; the reflective electrode structure is arranged in the same layer as the interdigital transducer; the first region is located between two second regions, the interdigital transducer is located in the first region, the reflective electrode structure is located in the second region, and the surface acoustic wave resonator further includes a groove located in the piezoelectric material layer, the groove is located in the second region, and is located at a side of the reflective electrode structure away from the interdigital transducer in the first direction.

Surface acoustic wave resonator, filter, and communication device

A surface acoustic wave resonator device and manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, disposed on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes located in the body region and respectively connected to the first and second interdigital electrode lead-out parts; and a conductive structure, disposed on a side of the interdigital transducer away from the piezoelectric substrate, and at least includes a body structure and a first sawtooth structure, the body structure continuously extends across the interdigital electrodes in the second direction, the first sawtooth structure is located at a side of the body structure, and at least a portion of the body structure and the first sawtooth structure overlap with end portions of the interdigital electrodes close to a periphery region in the third direction.

Surface acoustic wave resonator device and manufacturing method therefor and filter

A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer. At least a portion of the back electrode is exposed in the cavity.

Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer

A surface acoustic wave resonator device, manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, located on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes extending along a first direction and alternately arranged along a second direction, the first interdigital electrode is connected to the first interdigital electrode lead-out part, and the second interdigital electrode is connected to the second interdigital electrode lead-out part; and a clutter suppression structure, including a body structure and a sawtooth structure, wherein the body structure continuously extends along the second direction and overlaps with the interdigital electrodes in a third direction, and the sawtooth structure is disposed at a side of the body structure in the first direction, and at least a portion of the sawtooth structure overlaps with the interdigital electrodes in the third direction.

Surface acoustic wave resonator device, manufacturing method therefore and filter

An acoustic wave device includes a piezoelectric substrate and an interdigital transducer disposed on the piezoelectric substrate, the interdigital transducer including a center region, first and second edge regions, and first and second gap regions, a temperature compensation layer covering the interdigital transducer, and a floating metal layer buried in the temperature compensation layer or disposed on top of the temperature compensation layer. The floating metal layer includes a plurality of floating metal blocks spaced apart from each other and overlapping at least the first and second edge regions of the interdigital transducer.

Surface acoustic wave device

A surface acoustic wave resonator device, and method for manufacturing the same and filter, the method includes: forming an interdigital transducer including interdigital electrodes on the piezoelectric substrate; forming the interdigital transducer includes: forming initial interdigital electrodes on the piezoelectric substrate, wherein each initial interdigital electrode has a first width, and every two adjacent initial interdigital electrodes have an initial interdigital gap with a first spacing therebetween; and forming additional interdigital electrodes on the piezoelectric substrate, wherein each initial interdigital gap has a portion filled by one of additional interdigital electrodes; each interdigital electrode includes an initial interdigital electrode and an additional interdigital electrode connected to each other; each interdigital electrode has a second width, and every two adjacent interdigital electrodes have a second spacing therebetween; the second width is greater than the first width, and the second spacing is smaller than the first spacing.

Surface acoustic wave resonator device and method for manufacturing the same and filter

A surface acoustic wave resonator device and method for manufacturing the same, and filter, the surface acoustic wave resonator device includes an interdigital electrode body region, and including: a piezoelectric substrate; a first interdigital electrode, a first interdigital electrode connection part and a first interdigital electrode lead-out part electrically connected to each other; a second interdigital electrode, a second interdigital electrode connection part and a second interdigital electrode lead-out part electrically connected to each other; and a spanning structure; wherein the first and second interdigital electrode connection parts are respectively located on opposite sides of the interdigital electrode body region; the first interdigital electrode connection part contacts the first interdigital electrode and is electrically isolated from the second interdigital electrode through the spanning structure; the second interdigital electrode connection part contacts the second interdigital electrode and is electrically isolated from the first interdigital electrode through the spanning structure.

Surface acoustic wave resonator device and method for manufacturing the same, and filter

A surface acoustic wave resonator device and method for manufacturing the same and filter, the surface acoustic wave resonator device includes: a piezoelectric substrate; an interdigital transducer, disposed on the piezoelectric substrate and comprising a first interdigital electrode structure and a second interdigital electrode structure, wherein each interdigital electrode structure comprises an interdigital electrode and an interdigital electrode lead-out part connected with each other; and a first temperature compensation layer, disposed on the piezoelectric substrate and comprising a body part and a protruding part, wherein the body part covers the interdigital transducer, the protruding part is protruded from the body part towards the piezoelectric substrate in a third direction perpendicular to a main surface of the piezoelectric substrate, and is surrounded by the piezoelectric substrate in a direction parallel to the main surface of the piezoelectric substrate.

A bulk acoustic wave resonator and method for manufacturing the same, the bulk acoustic wave resonator includes: a piezoelectric layer; a first electrode layer, a carrier structure, and first and second conductive connectors disposed on a first side of the piezoelectric layer, and a second electrode layer, an interconnection pad and a cover structure disposed on a second side of the piezoelectric layer, wherein the first electrode layer includes a first electrode and an additional electrode electrically isolated from each other; the second electrode layer includes a second electrode; the interconnection pad is electrically connected to the second electrode and the additional electrode; a first cavity is disposed between the carrier structure and the piezoelectric layer; the first conductive connector is electrically connected to the first electrode, the second conductive connector is electrically connected to the second electrode through the additional electrode and the interconnection pad.

A surface acoustic wave resonator, a filter, a manufacturing method thereof and a communication device. The surface acoustic wave resonator includes a piezoelectric material layer, an interdigital transducer and a dielectric layer; the interdigital transducer is located at a side of the piezoelectric material layer, and the dielectric layer is located between the interdigital transducer and the piezoelectric material layer. Therefore, the surface acoustic wave resonator can reduce the electromechanical coupling coefficient of the surface acoustic wave resonator by arranging the dielectric layer between the interdigital transducer and the piezoelectric material layer. In addition, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by controlling the thickness of the dielectric layer.

Surface acoustic wave resonator, filter, manufacturing method thereof, and communication device

A surface acoustic wave resonator device, its manufacturing method, and a filter are disclosed. The device includes a piezoelectric substrate, and an interdigital transducer on a side of the substrate, having an interdigital electrode region, and including a first interdigital electrode and a first interdigital electrode lead-out part connected to each other, and a second interdigital electrode and a second interdigital electrode lead-out part connected to each other. The first and second interdigital electrodes are located in the interdigital electrode region, extending along a first direction and alternately arranged in a second direction. The first and second interdigital electrode lead-out parts are located on opposite sides of the interdigital electrode region. A first conductive structure and a second conductive structure overlap with end portions of the interdigital electrodes and are electrically connected to the corresponding interdigital electrodes, respectively.

Surface acoustic wave resonator device and method of manufacturing the same, filter

A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a back electrode on a first portion of the piezoelectric substrate, forming a first dielectric layer on the first portion of the piezoelectric substrate, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer formed with the trench, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming an interdigital transducer (IDT) on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity below the back electrode.

A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.

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Guangdong, China

Gongbin Tang