National University of Singapore

Soitec

Gong Xiao

Bich-Yen Nguyen

Christophe Maleville

Walter Schwarzenbach

Chen Sun

Haiwen Xu

Aaron Thean

A semiconductor structure, including: a base substrate; an insulating layer on the base substrate, the insulating layer having a thickness between about 5 nm and about 100 nm; and an active layer comprising at least two pluralities of different volumes of semiconductor material comprising silicon, germanium, and/or silicon germanium, the active layer disposed over the insulating layer, the at least two pluralities of different volumes of semiconductor material comprising: a first plurality of volumes of semiconductor material having a tensile strain of at least about 0.6%; and a second plurality of volumes of semiconductor material having a compressive strain of at least about −0.6%. Also described is a method of preparing a semiconductor structure and a segmented strained silicon-on-insulator device.

Device architectures with tensile and compressive strained substrates

Growing community of inventors

Singapore, Singapore

Gong Xiao