Georgia Tech Research Corporation

Old Dominion University Research Foundation

Gon Namkoong

William Alan Doolittle

Tarek Abdel-Fattah

Helmut Baumgart

Diefeng Gu

Methods for making multiple walled nested coaxial nanostructures and devices incorporating the coaxial nanostructures are disclosed. The coaxial nanostructures include an inner nanostructure, a first outer nanotube disposed around the inner nanostructure, and a first annular channel between the inner nanostructure and the first outer nanotube. The coaxial nanostructures have extremely high aspect ratios, ranging from about 5 to about 1,200, or about 300 to about 1200.

Method for making multiple walled nested coaxial nanostructures

A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an AlInGaN; 0&#x2266;x&#x3c;1, 0&#x3c;y&#x2266;1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers AlInGaN/GaN; 0&#x2266;x&#x3c;1, 0&#x3c;y&#x2266;1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Growing community of inventors

Yorktown, VA, United States of America

Gon Namkoong