Jsr Corporation

Goji Wakamatsu

Tsubasa Abe

Kazunori Sakai

Shin-ya Nakafuji

Naoya Nosaka

Hayato Namai

Yoshio Takimoto

Yuushi Matsumura

Kentaro Harada

Toru Kimura

Masayoshi Ishikawa

Hiroki Nakagawa

Kazunori Takanashi

Hiromitsu Tanaka

Tooru Kimura

Fumihiro Toyokawa

Hiroki Nakatsu

Masayuki Miyake

Ichihiro Miura

Shun Aoki

Shingo Takasugi

Syun Aoki

Kengo Ehara

A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), Rrepresents a single bond or an oxygen atom, Rrepresents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound.*&#x2014;R&#x2014;R&#x2014;CN&#x2003;&#x2003;(1)

Composition for resist underlayer film formation, resist underlayer film and method for producing patterned substrate

A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): Rand Reach independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of Rand Rrepresents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or Rand Rtaken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which Rand Rbond. 

Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method

A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. Rrepresents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; Lrepresents an ethynediyl group or a substituted or unsubstituted ethenediyl group; Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3. 

Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound

A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156&#xb0; C., and a second solvent having a normal boiling point of no less than 156&#xb0; C. and less than 300&#xb0; C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

Resist underlayer film-forming composition, resist underlayer film, resist underlayer film-forming process, and production method of patterned substrate

A cleaning method of an immersion liquid includes supplying an immersion liquid on a surface of a cleaning substrate. The immersion liquid is to be used in a liquid immersion lithography apparatus. The cleaning substrate has a substrate and an organic film laminated on a top face side of the substrate. The immersion liquid is allowed to move on the substrate to remove contaminants from the immersion liquid.

Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Pattern-forming method, resin, and composition

A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. Xand Xeach independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. Rand Reach independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8. 

Composition for film formation, film, production method of patterned substrate, and compound

A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450&#xb0; C. and 800&#xb0; C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500&#xb0; C. or higher and 600&#xb0; C. or lower.

Method for film formation, and pattern-forming method

A composition comprises: a compound having one partial structure represented by formula (1), and a solvent. n1 and n2 are each independently an integer of 0 to 2; and k1 and k2 are each independently an integer of 0 to 9. The compound preferably has an intermolecular bond-forming group. The compound is preferably represented by formula (2). Z represents the partial structure represented by the formula (1); Arand Arrepresent a substituted or unsubstituted arenediyl group having 6 to 20 carbon atoms; Arand Arrepresent a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and p1 and p2 are each independently an integer of 0 to 3.  

A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R, Rand Reach independently represent a group represented by the formula (a). In the formula (a), Rrepresents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. Rrepresents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring. 

Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

A composition for film formation includes a compound represented by formula (1), and a solvent. Rrepresents a monovalent group including an aromatic ring. n is an integer of 3 to 6. At least one monovalent group represented by Rfurther includes a group including an ethylenic double bond. a plurality of Rs are identical or different. A part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms. 

Composition for film formation, resist underlayer film, and forming method of resist underlayer film, and pattern-forming method

A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution.&#x2014;O&#x2014;R&#x2003;&#x2003;(i)

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Tokyo, Japan

Goji Wakamatsu