Nitto-denko Corporation

Goji Shiga

Naohide Takamoto

Fumiteru Asai

Takeshi Matsumura

Chie Iino

Kosuke Morita

Jun Ishii

Eiji Toyoda

Tsuyoshi Ishizaka

Toshimasa Sugimura

Akiyoshi Yamamoto

Tomokazu Takahashi

Yusuke Komoto

Yusaku Shimizu

Provided are a resin sheet, for sealing an electronic device, which is not easily shifted out of position; and a method for manufacturing an electronic-device package. This resin sheet, for sealing an electronic device, has a probe tack of 5 to 500 g at 25&#xb0; C. The tack is measured, using a probe having a diameter of 25 mm.

Resin sheet for sealing electronic device and method for manufacturing electronic-device package

The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200&#xb0; C. or more or a metal.

Film for flip chip type semiconductor back surface and its use

A sealing sheet with separators on both surfaces is provided with a sealing sheet, a separator (A) stacked on one surface of the sealing sheet and having a thickness of 50 &#x3bc;m or more, and a separator (B) stacked on the other surface of the sealing sheet.

Sealing sheet with separators on both surfaces, and method for manufacturing semiconductor device

Provided is a sealing sheet capable of preventing void and filler segregation from occurring when forming a sealing body in which semiconductor chips are buried in the sealing sheet. The sealing sheet has a viscosity within the range of 1 Pa&#xb7;s to 50000 Pa&#xb7;s at 90&#xb0; C.

Sealing sheet

The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23&#xb0; C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23&#xb0; C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

Film for back surface of flip-chip semiconductor

The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most &#x2154; of the thickness of the separator.

Film for semiconductor device production, method for producing film for semiconductor device production, and method for semiconductor device production

Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 &#x3bc;m or less before the sheet is cured.

Sheet for sealing and method for manufacturing semiconductor device using said sheet for sealing

The present invention provides a thermally curable resin sheet for sealing a semiconductor chip having excellent reliability and storability while being reduced in warpage deformation due to the volume shrinkage of the thermally curable resin sheet, and a method for manufacturing a semiconductor package. The present invention relates to a thermally curable resin sheet for sealing a semiconductor chip, wherein an activation energy (Ea) satisfies the following formula (1), a glass transition temperature of a product thermally cured at 150&#xb0; C. for 1 hour is 125&#xb0; C. or higher, and a thermal expansion coefficient &#x3b1; [ppm/K] of the thermally cured product at the glass transition temperature or lower and a storage modulus E' [GPa] at 25&#xb0; C. of the thermally cured product satisfy the following formula (2):30&#x2266;&#x2266;120 [kJ/mol]&#x2003;&#x2003;(1); and10,000&#x2266;&#x3b1;&#xd7;&#x2032;&#x2266;300,000 [Pa/K]&#x2003;&#x2003;(2).

Thermally curable resin sheet for sealing semiconductor chip, and method for manufacturing semiconductor package

The present invention provides an adhesive sheet used in manufacture of a semiconductor device, containing a filler having an average particle size of 0.3 &#x3bc;m or less and an acrylic resin, wherein the content of the filler is in the range of 20 to 45% by weight with respect to the entire adhesive sheet, and the content of the acrylic resin is in the range of 40 to 70% by weight with respect to entire resin components.

Adhesive sheet used in manufacture of semiconductor device, adhesive sheet integrated with dicing tape, semiconductor device, and method of manufacturing semiconductor device

The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

Dicing tape-integrated film for semiconductor back surface

The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

An object of the present invention is to provide a method of manufacturing a flip-chip type semiconductor device with a simplified process, in which various types of information are supplied in a visually recognizable manner. The present invention relates to a method of manufacturing a flip-chip type semiconductor device comprising: a step A of laminating on a semiconductor wafer a film for the backside of a flip-chip type semiconductor, in which the film is to be formed on the backside of a semiconductor element that is flip-chip connected onto an adherend; a step B of dicing the semiconductor wafer; and a step C of laser marking the film for the backside of a flip-chip type semiconductor, wherein the film for the backside of a flip-chip type semiconductor in the step C is uncured.

Method of manufacturing flip-chip type semiconductor device

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23&#xb0; C. to 165&#xb0; C. of 100 ppm/&#xb0; C. to 400 ppm/&#xb0; C.

Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device

The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is 2% by volume or more and not more than 30% by volume relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing. According to the film for back surface of flip-chip semiconductor according to the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, in the film for back surface of flip-chip semiconductor according to the present invention, since an amount of shrinkage due to thermal curing is 2% by volume or more relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing, a warp of a semiconductor element to be generated at the time of flip-chip connecting the semiconductor element onto an adherend can be effectively suppressed or prevented.

Film for back surface of flip-chip semiconductor, dicing-tape-integrated film for back surface of semiconductor, process for producing semiconductor device, and flip-chip semiconductor device

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

Growing community of inventors

Osaka, Japan

Goji Shiga