Siemens Aktiengesellschaft

Qimonda Ag

Goetz Springer

Detlef Weber

Marco Lepper

Wolfgang Dickenscheid

Grit Bonsdorf

Frank Pietzschmann

Ole Bosholm

The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device

The polishing device grinds or polishes semiconductor substrates. The device includes a polishing table, into which a measuring device is integrated and a through opening. A polishing cloth covers the polishing table. The polishing cloth has at least one opening formed therein which corresponds to the through opening in the polishing table. The invention also relates to a polishing cloth for use in the polishing device.

Polishing device and polishing cloth for semiconductor substrates

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Dresden, Germany

Goetz Springer