Siltronic Ag

Goetz Meisterernst

Simon Zitzelsberger

Ludwig Altmannshofer

Kurt Niederer

Frank Muemmler

Gundars Ratnieks

Josef Berger

Helmut Teroerde

Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving

Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer

A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

Method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method

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Muehldorf, Germany

Goetz Meisterernst