Sun Microsystems, Inc.

Synopsys, Inc.

Goetz Leonhardt

Baribrata Biswas

Beifang Qiu

Mahmoud Shahram

Byungwook Kim

Kishore Singhal

Edhi Sutjahjo

Sergey Krasnovsky

Alex Gyure

One embodiment of the present invention provides a system for determining an electrical property for an interconnect layer. During operation, the system receives interconnect technology data which includes nominal parameter values for a first interconnect layer, and parameter-variation values which represent variations in the nominal parameter values due to random process variations. Next, the system receives an interconnect template which describes the geometry of a portion of a second interconnect layer. The system then determines electrical property data for the interconnect template using the interconnect technology data. The electrical property data can include a nominal electrical property value, and sensitivity values which represent the sensitivities of the nominal electrical property value to variations in the nominal parameter values. Next, the system stores the electrical property data and the interconnect technology data in a storage.

Method and apparatus for facilitating variation-aware parasitic extraction

A tool for automatically generating a reduced size circuit model including inductive interaction properties is provided. Such inclusion of inductive properties in the reduced size circuit model allows for a more complete and accurate circuit model than those created by conventional methods. Further, a technique for automatically generating a reduced size circuit model including inductive properties that uses less memory space and operates faster than conventional methods is provided.

Automatic generation of reduced-size circuit models including inductive interaction

A method to convert a wire layout geometry to a filament topology for determination of chip resistance is provided. The method includes resolving overlap of layout segments of the wire layout geometry and inserting a vertical filament into each of the layout segments. The method further includes connecting vertical filaments using lateral connections and merging connected parallel filaments. The method also includes removing open filaments and modifying the filament structure in a bend region based on relative dimensions of the vertical filaments within the bend region.

Algorithm for full-chip resistance extraction

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San Jose, CA, United States of America

Goetz Leonhardt