Forschungsverbund Berlin E.v.

Goetz Erbert

Hans Wenzel

Paul Crump

Joerg Fricke

Markus Weyers

Martin Spreemann

Andre Maassdorf

Jonathan Decker

Olaf Brox

Frank Bugge

Christoph M Schultz

The invention relates to a laser diode () which has at least one active layer () which is arranged within a resonator () and is operatively connected to a outcoupling element (), and further at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along a longitudinal axis (X) of the active layer () is less than 20 &#x3bc;m, and a projection of the resistor elements () on the active layer () along the first axis (Z) overlap with at least 10% of the active layer ().

Laser diode with improved electrical conduction properties

It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (), the first cladding layer (), the first waveguide layer (), the second waveguide layer (), and the second cladding layer () should be designed such that 0.01 &#x3bc;m&#x2266;d&#x2266;1.0 &#x3bc;m and &#x394;n&#x2267;0.04, where dis the sum total of the layer thickness of the first waveguide layer (), the layer thickness of the active layer (), and the layer thickness of the second waveguide layer () and &#x394;n is a maximum of the refractive index difference between the first cladding layer () and the first waveguide layer () and the refractive index difference between the second waveguide layer () and the second cladding layer ().

Laser diode with high efficiency

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

Diode laser and method for manufacturing a high-efficiency diode laser

A diode laser and a laser resonator for a diode laser are provided, which has high lateral beam quality at high power output, requires little adjustment effort and is inexpensive to produce. The laser resonator according to the invention comprises a gain section (GS), a first planar Bragg reflector (DBR) and a second planar Bragg reflector (DBR), wherein the gain section (GS) has a trapezoidal design and the first planar Bragg reflector (DBR) is arranged on a first base side of the trapezoidal gain section (GS) and the second planar Bragg reflector (DBR) is arranged on the opposing base side of the trapezoidal gain section (GS), wherein the width (D) of the first planar Bragg reflector (DBR) differs from the width (D) of the second planar Bragg reflector (DBR).

Diode laser and laser resonator for a diode laser having improved lateral beam quality

A broad area laser, with high efficiency and small far-field divergence, has an active layer, a first contact and a second contact, each having a width larger than 10 &#x3bc;m. An anti-wave guiding layer, which is positioned laterally with respect to the active region, is enclosed between the first and second contacts, wherein a refractive index of the anti-wave guiding layer is larger than a minimum refractive index of cladding layers. A minimum distance between the anti-wave guiding layer and a projection of one of the contacts on the plane of the anti-wave guiding layer is between 0 and 100 &#x3bc;m.

Growing community of inventors

Berlin, Germany

Goetz Erbert