Nxp B.v.

Godfridus Adrianus Maria Hurkx

Philippe Meunier-Beillard

Prabhat Agarwal

Raymond James Duffy

The invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region which are respectively of the N-type conductivity, the P-type conductivity and the N-type conductivity by the provision of suitable doping atoms, wherein the base region comprises a mixed crystal of silicon and germanium, the base region is separated from the emitter region by an intermediate region of silicon having a doping concentration which is lower than the doping concentration of the emitter region and with a thickness smaller than the thickness of the emitter region, and the emitter region comprises a sub-region comprising a mixed crystal of silicon and germanium which is positioned at the side of emitter region remote from the intermediate region.

Growing community of inventors

Best, Netherlands

Godfridus Adrianus Maria Hurkx