Nxp B.v.

Godefridus Hurkx

Tony Vanhoucke

Prabhat Agarwal

Sebastien Nuttinck

A device () for generating an output signal (So) having substantially same or increased output frequency compared to an input frequency of an input signal (Si), the device () comprising: a bipolar transistor () having a base (B), a collector (C), and an emitter (E); a control unit () adapted for controlling application of the input signal (Si) to the base (B) and adapted for controlling application of a collector-emitter voltage between the collector (C) and the emitter (E) in a manner for operating the bipolar transistor () in a snap-back regime to obtain a non-linear collector current characteristic to thereby generate the output signal (So) having the substantially same or increased output frequency resulting from a steeply rising collector current.

Device for and a method of generating signals

The invention suggests a transistor () comprising a source () and a drain () as well as a barrier region () located between the source and the drain. The barrier region is separated from the source and the drain by intrinsic or lowly doped regions () of a semiconductor material. Potential barriers are formed at the interfaces of the barrier region and the intrinsic or lowly doped regions. A gate electrode () is provided in the vicinity of the potential barriers such that the effective height and/or width of the potential barriers can be modulated by applying an appropriate voltage to the gate electrode.

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Godefridus Hurkx