Intel Corporation

Gobind Bisht

Noriyuki Sato

Charles Henry Wallace

Manish Chandhok

Leonard P Guler

Paul Anton Nyhus

Eungnak Han

David N Shykind

Gurpreet Singh

Jinnie Aloysius

Jonathan Laib

An integrated circuit interconnect structure includes a first metallization level including a first metal line having a first sidewall and a second sidewall extending a length in a first direction. A second metal line is adjacent to the first metal line and a dielectric is between the first metal line and the second metal line. A second metallization level is above the first metallization level where the second metallization level includes a third metal line extending a length in a second direction orthogonal to the first direction. The third metal line extends over the first metal line and the second metal line but not beyond the first sidewall. A conductive via is between the first metal line and the third metal line where the conductive via does not extend beyond the first sidewall or beyond the second sidewall.

Self aligned gratings for tight pitch interconnects and methods of fabrication

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Portland, OR, United States of America

Gobind Bisht