Kioxia Corporation

Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Go Urakawa

Tsuneo Suzuki

According to one or more embodiments, a semiconductor integrated circuit device includes a first inductor portion, a second inductor portion, and a third inductor portion. The first inductor portion is in a first region of a first wiring layer. The second inductor portion is disposed in a second region of the first wiring layer. The third inductor portion is on a second wiring layer spaced from the first wiring layer in a first direction. The third inductor portion includes a first end portion electrically connected to a first end of the first inductor portion, a second end portion electrically connected to a first end of the second inductor portion, and a third end portion between the first and second end portions. The first inductor portion, the second inductor portion, and the third inductor portion constitute an inductor element.

Semiconductor integrated circuit device and oscillation circuit apparatus

A semiconductor integrated circuit includes a first circuit and a second circuit. The first circuit is configured to divide a first pulse signal having a first duty cycle by N (where N is an integer of 2 or more), and output 2&#xd7;N second pulse signals of which phases are different from each other. The first pulse signal is a pair of differential signals. The second circuit is configured to receive one or more selection signals and calculate a logical product of one of the one or more selection signals and two of the 2&#xd7;N second pulse signals to generate a third pulse signal having a second duty cycle less than the first duty cycle.

Semiconductor integrated circuit and receiving device

A voltage controlled oscillator includes a first inductor; a first variable capacitance unit including a first variable capacitance element having a variable capacitance and a second variable capacitance element having a variable capacitance; a first node configured for application of a first voltage to the first variable capacitance unit; a cross-coupled unit including a first transistor and a second transistor, an output of the first transistor connected to an input of the second transistor; a current source configured to flow a current through the first inductor, the first transistor, and the second transistor; a second variable capacitance unit including a third variable capacitance element having a variable capacitance, and a fourth variable capacitance element having a variable capacitance; and a second node different from the first node configured for application of a second voltage to the second variable capacitance unit.

Voltage controlled oscillator, semiconductor integrated circuit, and transmission and reception device

A charge pump circuit of an embodiment includes a current mirror circuit, a first drive switch, a capacitor and a switch circuit. The current mirror circuit causes a current obtained by mirroring a reference current to flow to a first output terminal and a second output terminal. The first drive switch connects or disconnects the first output terminal and a charge pump output terminal. The switch circuit connects the capacitor either to a discharge path between the second output terminal and a node which provides a predetermined voltage or to a charge path between the charge pump output terminal and a GND.

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Yokohama Kanagawa, Japan

Go Urakawa