Hitachi-high-technologies Corporation

Hitachi, Ltd.

Go Saito

Motohiko Yoshigai

Masamichi Sakaguchi

Hiroaki Ishimura

Takao Arase

Takahiro Shimomura

Junichi Tanaka

Ken Yoshioka

Masahito Mori

Tetsuo Ono

Seiichiro Kanno

Naoyuki Kofuji

Naoshi Itabashi

Takahiro Abe

Go Miya

Hitoshi Kobayashi

Kenichi Kuwabara

Kazuo Takata

Satoshi Tani

Toshiaki Nishida

Tomoyoshi Ichimaru

Yutaka Kudoh

Kenji Fujimoto

The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.

Plasma processing method

In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.

Method of semiconductor processing

A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

Plasma etching apparatus and plasma etching method

A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing AlOand a polysilicon or SiOlayer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl, Ar, and CHor He. The gas mixture further contains Cl. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100&#xb0; C. to 200&#xb0; C. The interlayer insulating layer and the polysilicon or SiOlayer are separately etched in different chambers.

Method for manufacturing semiconductor devices

In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

Plasma processing method and plasma processing apparatus

A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Plasma processing method for working the surface of semiconductor devices

A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Method for manufacturing semiconductor device

The temperature of the specimen holder in the vacuum container is lowered with the thermal control unit to adjust the temperature of the specimen composed of a silicon substrate to a low temperature of 0&deg; C. or lower. Then, trenches are formed in the specimen by plasma etching using an etching gas comprising SF as the main constituent and optionally O as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.

Plasma etching method

Growing community of inventors

Hikari, Japan

Go Saito