The Furukawa Electric Co., Ltd.

Hitachi, Ltd.

Kobayashi Co., Ltd.

Go Kobayashi

Tatsuya Kimoto

Hideaki Hasegawa

Junichi Hasegawa

Hiroaki Hashimoto

Kazuaki Kiyota

Keisuke Sakai

Kenichi Okubo

Toshikazu Mukaihara

Kenji Miyashita

Noritaka Matsubara

Toshihito Suzuki

Nanae Tanaka

A storage container includes: a substrate having a plurality of storage wells to store an object therein, the storage wells being formed on a predetermined substrate surface of the substrate. Further, the storage wells each includes an opening forming portion forming an opening portion opening on the substrate surface, and having an inclined surface that inclines from the substrate surface downward in a depth direction on an inner surface of the opening portion; and a bottomed storage portion that has a side wall surface extending in a direction perpendicular to the substrate surface on a lower side in the depth direction of the storage well relative to the opening forming portion, and that communicates with a region on the substrate surface through the opening portion, and a lower end of the inclined surface is connected to the side wall surface of the storage portion, forming a ridgeline.

Storage container

An object of the invention is to provide a method for conditioning a surface of a molded article. The present invention relates to a combination of a mold used for curing a thermosetting resin and a release film placed between the thermosetting resin and the mold during the curing. The release film comprises a base layer formed of a thermoplastic resin and a surface layer formed of a particle-containing fluororesin and laminated to the face which is placed during the curing on the side of the thermosetting resin among the two faces of the base layer. The mold has an irregularity formed on the face brought into contact with the release film during the curing.

Combination of mold and release film, release film, mold, and method for manufacturing molded article

A disclosed semiconductor laser device includes a distributed feedback portion serving as a light-emittable active region the distributed feedback portion having a diffraction grating; and a distributed reflective portion serving as a passive reflective mirror, the distributed reflective portion having a diffraction grating, wherein the distributed feedback portion includes a first region adjacent to the distributed reflective portion and having a diffraction grating having a predetermined standard period, a phase shift region adjacent to the first region, the phase shift region being longer by twice or more than the standard period, and a second region adjacent to an opposite side to the first region of the phase shift region and having a diffraction grating with the standard period, and the phase shift region optically changes a phase of laser beam between the first region and the second region.

Semiconductor laser device

The gas circuit breaker is made up of a fixed contact, a movable contact, a sealed tank having the fixed contact and the movable contact therein, an operating mechanism for driving the movable contact, and a mechanism unit for housing a link mechanism for connecting the operating mechanism with the movable contact. The operating mechanism is made up of an opening spring and a closing spring, cases for covering respective peripheries of those elastic bodies, a control mechanism for holding and freeing the driving force of the elastic body, and a link mechanism for conveying the driving force of the elastic body to the movable contact. The opening spring is laterally disposed in the axial direction between the link mechanism and the control mechanism. An integral flange is provided on an opening spring case and a closing spring case.

Gas circuit breaker

A semiconductor laser element includes: a semiconductor-layered structure including a waveguide core layer and having a distributed feedback laser portion and a distributed Bragg reflection portion, the waveguide core layer having a length continuous in an optical cavity length direction and a diffraction grating layer being disposed in vicinity of the waveguide core layer and along the waveguide core layer in the distributed feedback laser portion, and the waveguide core layer being disposed discretely and periodically to form a diffraction grating in the distributed Bragg reflection portion; and an electrode for injecting a current to the distributed feedback laser portion. The distributed feedback laser portion oscillates a laser light at a wavelength corresponding to a period of the diffraction grating layer. The diffraction grating formed by the waveguide core layer in the distributed Bragg reflection portion is set to have a stop band including the wavelength of the laser light.

Semiconductor laser element, integrated semiconductor laser element, and method for producing semiconductor laser element

Integrated are: semiconductor lasers of distributed feedback type that oscillate in single mode at emission wavelengths different from one another; a coupler that has as many input ports as the semiconductor lasers, the input ports to which output light from the semiconductor lasers are input, the coupler guiding and outputting the output light; and an amplifier that amplifies the output light from the coupler, and a predetermined relation holds true, where 'N' is the number of the semiconductor lasers, 'Ldfb' is a cavity length of each of the semiconductor lasers, &#x201c;&#x394;&#x3bd;&#x201d; is a spectral linewidth of laser light output therefrom, &#x201c;Lsoa&#x201d; is an amplifier length of the amplifier, &#x201c;A&#x201d; is an amplification factor of the amplifier, &#x201c;&#x394;&#x3bd;&#x201d; is a spectral linewidth of amplified laser light output therefrom, and &#x201c;R&#x201d; is &#x394;&#x3bd;/&#x394;&#x3bd;

Integrated semiconductor laser element

A semiconductor laser module includes a semiconductor laser unit and a light selecting unit. The semiconductor laser unit includes a semiconductor laser substrate and a plurality of distributed reflector semiconductor laser devices formed on the semiconductor laser substrate in an array. Each of the distributed reflector semiconductor laser devices is configured to emit a laser light of a different wavelength from an output facet. The light selecting unit includes a light selecting device substrate and a light selecting device formed on the light selecting device substrate. The light selecting device is configured to selectively output a laser light emitted from a distributed reflector semiconductor laser device. The semiconductor laser unit and the light selecting unit are attached to each other in such a manner that the light selecting device is optically coupled to the distributed reflector semiconductor laser devices.

Growing community of inventors

Tokyo, Japan

Go Kobayashi