Mitsubishi Gas Chemical Company, Inc.

Go Higashihara

Masatoshi Echigo

Atsushi Okoshi

Naoya Uchiyama

Takashi Makinoshima

Kana Okada

Mitsuharu Kitamura

Dai Oguro

Masayuki Katagiri

Yuuichi Sugano

Seiji Kita

Masashi Ogiwara

Makoto Tsubuku

Kenji Arii

A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used. (in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, Rrepresents a 2n-valent group having 1 to 30 carbon atoms, or a single bond, each Rindependently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each mis independently an integer of 0 to 4, in which at least one mis an integer of 1 to 4, each mis independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

The composition for forming an underlayer film for lithography according to the present invention contains a compound represented by a specific formula (1) and 20 to 99% by mass of a solvent component (S), in which 27 to 100% by mass of the compound represented by the formula (1) is included in a component (A) other than the solvent component (S).

Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

Cyanate ester compound, curable resin composition containing said compound, and cured product of said composition

There is provided an aromatic hydrocarbon formaldehyde resin obtained by reacting an aromatic hydrocarbon compound (A) represented by the following formula (1) with formaldehyde (B) in the presence of an acidic catalyst. wherein R represents an organic group having 1 to 10 carbon atoms; l represents an integer of 0 to 2, and m and n represent integers satisfying 1&#x2266;m+n&#x2266;10, m&#x2267;0 and n&#x2267;1.

Aromatic hydrocarbon formaldehyde resin, modified aromatic hydrocarbon formaldehyde resin and epoxy resin, and method for producing these

There is provided an aromatic hydrocarbon formaldehyde resin obtained by reacting an aromatic hydrocarbon compound (A) represented by the following formula (1) with formaldehyde (B) in the presence of an acidic catalyst. wherein R represents an organic group having 1 to 10 carbon atoms; m and n represent integers satisfying 1&#x2266;m+n&#x2266;10, m&#x2267;0 and n&#x2267;1.

Aromatic hydrocarbon formaldehyde resin, modified aromatic hydrocarbon formaldehyde resin and epoxy resin, and methods for producing these

Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method

Provided are a naphthalene formaldehyde resin obtained by reacting a compound (A) represented by formula (1) and formaldehyde (B) in a molar ratio, (A):(B), of 1:1 to 1:20 in the presence of an acidic catalyst, and a deacetalized naphthalene formaldehyde resin and a modified naphthalene formaldehyde resin derived therefrom.

Naphthalene formaldehyde resin, deacetalized naphthalene formaldehyde resin, and modified naphthalene formaldehyde resin

There is provided a novel phenolic resin which can be used as a coating agent or a resist resin for a semiconductor, which has a high carbon concentration and a low oxygen concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. There are also provided a material useful for forming a novel photoresist underlayer film which has a relatively high solvent solubility, which can be applied to a wet process, and which is excellent in etching resistance as an underlayer film for a multilayer resist, an underlayer film formed using the same, and a pattern forming method using the same. A resin of the present invention is obtained by reacting a compound having a specified structure and an aldehyde having a specified structure in the presence of an acidic catalyst. In addition, a material for forming an underlayer film for lithography of the present invention includes at least the resin and an organic solvent.

Phenolic resin and material for forming underlayer film for lithography

Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.

Aromatic hydrocarbon resin, underlayer film forming composition for lithography, and method for forming multilayer resist pattern

A composition for forming an underlayer film for lithography for imparting excellent optical characteristics and etching resistance to an underlayer film for lithography, an underlayer film being formed of the composition and having a high refractive index (n) and a low extinction coefficient (k), being transparent, having high etching resistance, containing a significantly small amount of a sublimable component, and a method for forming a pattern using the underlayer film are provided. The composition for forming an underlayer film contains a naphthalene formaldehyde polymer having a specific unit obtained by reacting naphthalene and/or alkylnaphthalene with formaldehyde, and an organic solvent.

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Okayama, Japan

Go Higashihara