Samsung Electronics Co., Ltd.

Go-Eun Jung

Byung-Hoon Jeong

Young-Don Choi

Dong-Su Jang

Man-Jae Yang

Jeong-Don Ihm

Il-Han Park

Jeong-don Ihm

A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.

Non-volatile memory device and storage device including the same

A method of operating a nonvolatile memory device may include applying a first voltage greater than a ground voltage to a selected word line during a first time period; applying a second voltage to an unselected word line during a second time period that is later than the first time period; and applying a third voltage greater than the first voltage and the second voltage to the selected word line during the second time period. The second time period includes a third time period during which a voltage level of the unselected word line increases to the second voltage from a fourth voltage that is less than the second voltage, and during which a voltage level of the selected word line increases to the third voltage from the first voltage.

Nonvolatile memory device and method of operating the same

A nonvolatile memory device and a method of programming the nonvolatile semiconductor memory device are disclosed. The programming method includes applying a first voltage greater than a ground voltage to a selected word line at a first time; applying a second voltage greater than the first voltage to the selected word line at a second time that occurs after a predetermined period from the first time; applying the ground voltage to a first unselected word line directly adjacent to the selected word line at the first time; and applying a third voltage greater than the ground voltage to the first unselected word line at the second time.

Nonvolatile memory device and method of programming the same

Growing community of inventors

Hwaseong-si, South Korea

Go-Eun Jung