International Rectifier Corporation

Glyn Connah

Mark Pavier

Bruno Charles Nadd

Ajit Dubhashi

Marco Soldano

Peter R Ewer

David C Tam

Stephen Oliver

A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Low profile package having multiple die

A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

H-bridge with power switches and control in a single package

A semiconductor device package has a lead frame with four or more die receiving pads. The first pad is large enough to receive two or more of the die, laterally spaced from one another, while the other pads receive at least one die each. The die may be arranged in a single straight path, or in spaced parallel paths. The tops of selected ones of the die are bonded to lead frame elements of adjacent pads to complete bridge type circuits within the package. The die and pads are enclosed by a molded plastic housing and short sections of the pads protrude through the housing wall.

Semiconductor device package with plural pad lead frame

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Glossop, United Kingdom

Glyn Connah