International Business Machines Corporation

Gloria Wing Yun Fraczak

Chung H Lam

Hiroyuki Miyazoe

Robert L Bruce

Takeshi Masuda

Fabio Carta

Koukou Suu

Kumar R Virwani

Matthew Brightsky

Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

Method for manufacturing phase change memory

A mixed ionic electron conductor (MIEC)-based memory cell access device is provided. The MIEC-based memory cell access device includes a MIEC material portion located between a bottom electrode and a top electrode. A contact area between the MIEC material portion and the bottom electrode is substantially the same as a contact area between the MIEC material portion and the top electrode.

Optimal device structures for back-end-of-line compatible mixed ionic electronic conductors materials

Growing community of inventors

Queens, NY, United States of America

Gloria Wing Yun Fraczak