American Air Liquide, Inc.

L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

Tokyo Electron Limited

Glenn Kuchenbeiser

Venkateswara R Pallem

Jean-Marc Girard

Christian Dussarrat

Peng Zhang

Gennadiy Itov

Manish Khandelwal

Guillaume Husson

Sean Kerrigan

Cole Ritter

Nicolas Blasco

Antonio Sanchez

Matthew Damien Stephens

Zhiwen Wan

Reno Pesaresi

Yang Wang

David Orban

Larry Kit-wing Leung

Robert Daniel Clark

Grigory Nikiforov

Vincent M Omarjee

Steven Consiglio

Claudia Fafard

Bastien Lefevre

Venkat Pallem

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Solid or liquid N&#x2014;H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [&#x2014;N(SiH)(SiH&#x2014;)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

N&#x2014;H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

Methods of synthesizing Si&#x2014;H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Preparation of Si-H containing iodosilanes via halide exchange reaction

N&#x2014;H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications

Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiH(RN&#x2014;(CR)&#x2014;NR)(NRR)wherein R may each independently be H, a Cto Calkyl group, or a C-Caryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x&#x2260;3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Organosilane precursors for ALD/CVD silicon-containing film applications and methods of using the same

Preparation of Si&#x2014;H containing iodosilanes via halide exchange reaction

Methods of using Si-containing film forming compositions to deposit silicon-containing films using vapor deposition processes are disclosed. The disclosed Si-containing film forming composition comprises an amino(bromo)silane precursor having the formula:SiHBr(NRR)wherein x=0, 1 or 2; y=1, 2 or 3; x+y&#x3c;4; each Rand Ris independently selected from C-Calkyl, aryl, or hetero group; and Rand Rmay be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions include an amino(bromo)silane precursor selected from the group consisting of SiHBr(NEt), SiHBr(N(iPr)), SiHBr(N(iBu)) and SiBr(NMe).

Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications

Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)-E)SiH&#x2014;SiH(E-(CR)-E), wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Organodisilane precursors for ALD/CVD silicon-containing film applications

Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Organosilane precursors for ALD/CVD silicon-containing film applications

Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L, L, Land Lis independently selected from oxygen or nitrogen atoms; Land Lare joined together via a carbon bridge having one to three carbon atoms; Land Lare joined together via a carbon bridge having one to three carbon atoms; L, Land the carbon bridge forming a monoanionic ligand bonded to silicon; and L, Land the carbon bridge form a monoanionic ligand bonded to silicon.

Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications

Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiHI(N(iPr)) or SiHI(N(iBu)).

Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same

Disclosed are methods of synthesizing an amino(halo)silane comprising the step of reacting a halosilane having the formula SiHXwith an aminosilane having the formula SiH(NRR)to produce the amino(halo)silane having the formula SiHX(NRR), wherein X=Br or I; each Rand Ris independently selected from a C-Calkyl, aryl, or hetero group; a, d, and w independently=1 to 4; b+c=2a+2; b=1 to 2a+1; c=1 to 2a+1; e+f=2d+2; e=1 to 2d+1; f=1 to 2d+1; x+y+z=2w+2; and Rand Rmay be joined to form a nitrogen-containing heterocycle.

Synthesis methods for amino(halo)silanes

Disclosed are sulfur containing organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics. The disclosed precursors have the following formula: wherein Lis a sulfur atom and Lmay be chosen from a sulfur atom, an oxygen atom, or a nitrogen atom; Land Lare joined together via a carbon bridge having one to three carbon atoms; and L, Land the carbon bridge form a monoanionic ligand bonded to silicon.

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Newark, DE, United States of America

Glenn Kuchenbeiser