International Business Machines Corporation

Egypt Nanotechnology Center

Egypt Nanotechnology Center (egnc)

Egypt Nanotechnologies Center

Glenn John Martyna

Dennis Merton Newns

Bruce Gordon Elmegreen

Ahmed Maarouf

Ali Afzali-Ardakani

Binquan Luan

Hongbo Peng

Gustavo Alejandro Stolovitzky

Stephen Mark Rossnagel

Amal Kasry

Paul Michael Solomon

Xiao Hu Liu

Stefan Harrer

Stanislav Polonsky

George Stojan Tulevski

Lia Krusin-Elbaum

Bhupesh Chandra

Ageeth Anke Bol

Shu-Jen Han

Katherine Lynn Saenger

Thomas M Shaw

George Frederick Walker

Matthew Warren Copel

Hsinyu Tsai

Razvan Nistor

Chung H Lam

Alejandro Gabriel Schrott

Kuan-Neng Chen

Jing Li

Ajay K Royyuru

Ahmed Abou-Kandil

Marcelo A Kuroda

Hisham S Mohamed

Hariklia Deligianni

Teodor Krassimirov Todorov

Seyoung Kim

Talia S Gershon

Dario Leonardo Goldfarb

Kevin W Brew

Xiaoyan Shao

Kirsten Emilie Moselund

Shafaat Ahmed

Roger Hilsen Koch

Philip S Waggoner

Chang Chyi Tsuei

David P DiVincenzo

Martin Muser

Jim Rozen

Gustavo A Stolovitsky

A piezo-junction device may be provided. The piezo-junction device comprises a piezoelectric element comprising two electrodes and piezoelectric material in-between, and a semiconductor junction device adjacent to the piezoelectric element such that one of the two electrodes of the piezoelectric element is in contact with the semiconductor junction device connecting the semiconductor junction device and the piezoelectric element electrically in series. Thereby, the semiconductor junction device and the piezoelectric element are together positioned in a fixed mechanical clamp such that the piezoelectric element with an applied electrical field applies strain to the semiconductor junction device causing a change in Fermi levels of the semiconductor junction device.

Piezo-junction device

A piezoelectronic device with novel force amplification includes a first electrode; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; an insulator disposed on the second electrode; a piezoresistive layer disposed on the insulator; a third electrode disposed on the insulator; a fourth electrode disposed on the insulator; a semi-rigid housing surrounding the layers and the electrodes; wherein the semi-rigid housing is in contact with the first, third, and fourth electrodes and the piezoresistive layer; wherein the semi-rigid housing includes a void. The third and fourth electrodes are on the same plane and separated from each other in the transverse direction by a distance.

Piezoelectronic device with novel force amplification

A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.

Carbon nanotube-graphene hybrid transparent conductor and field effect transistor

A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.

Piezoelectronic switch device for RF applications

Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.

Memristive device based on reversible intercalated ion transfer between two meta-stable phases

A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.

A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene to create a graphene nanomesh with a patterned array of multiple holes; passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh; and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, wherein the receptor is a molecule that chemically binds to the target molecule, irrespective of the size of the target molecule.

Graphene nanomesh based charge sensor

A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Methods for forming a carbon nanotube-graphene hybrid film on a substrate

Structures and methods for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

Forming patterned graphene layers

A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. A graphene nanomesh based charge sensor includes a graphene nanomesh with a patterned array of multiple holes created by generating multiple holes in graphene in a periodic way, wherein: an edge of each of the multiple holes of the graphene nanomesh is passivated; and the passivated edge of each of the multiple holes of the graphene nanomesh is functionalized with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.

Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence

The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.

Nano-fluidic field effective device to control DNA transport through the same

An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate; applying a layer of graphene on top of the at least one patterned structure on the substrate; heating the layer of graphene on top of the at least one patterned structure to remove one or more graphene regions proximate to the at least one patterned structure; and removing the at least one patterned structure to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

Growing community of inventors

Croton on Hudson, NY, United States of America

Glenn John Martyna