Arkema Inc.

Atofina Chemicals, Inc.

Buffers & Biochemicals Corporation

Glenn Carroll

Nicholas Michael Martyak

Gary S Smith

Martin Nosowitz

Patrick Kendall Janney

Gary E Stringer

David Bow

A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-[N-Morpholino])propanesulfonic acid, 2-[(2-Amino-2-oxoethyl)amino]ethanesulfonic acid, Piperazine-N, N'-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N ,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N&#x2032;-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-[N ,N-Bis(2-hydroxyethyl)amino]-2-hydroxypropanesulfonic acid, 3-[N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N&#x2032;-(2-hydroxypropanesulfonic acid), Piperazine-N ,N&#x2032;-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N&#x2032;-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-[(1,1-Dimethy 1-2-hydroxyethyl)amino]-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-I-propanesulfonic acid, 2-Amino-2-methyl-I-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents

The present invention relates to a process for the preparation of substituted alkanesulfonates by the reaction of an aqueous metal substituted 2-hydroxyethanesulfonate with a nucleophile. 2-Alkylaminoalkanesulfonate is formed when the nucleophile is an amine. The invention also relates to the optimization of reaction conditions to produce an optimum yield.

Preparation of substituted alkanesulfonates from 2-hydroxyalkanesulfonates

A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Composition and method for copper chemical mechanical planarization

A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-&lsqb;N-Morpholino&rsqb;)propanesulfonic acid, 2-&lsqb;(2-Amino-2-oxoethyl)amino&rsqb;ethanesulfonic acid, Piperazine-N,N&prime;-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N&prime;-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-&lsqb;N,N-Bis(2-hydroxyethyl)amino&rsqb;-2-hydroxypropanesulfonic acid, 3-&lsqb;N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N&prime;-(2-hydroxypropanesulfonic acid), Piperazine-N,N&prime;-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N&prime;-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-&lsqb;(1,1-Dimethy 1-2-hydroxyethyl)amino&rsqb;-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-l-propanesulfonic acid, 2-Amino-2-methyl-1-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

This invention relates to high purity hydrogen ion buffers and in particular amino-organosulfonic acid zwitterionic compositions having low metal content. The concentration of any single metal in the composition is no greater than about 500 ppb, and ideally is less than about 20 ppb.

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Norristown, PA, United States of America

Glenn Carroll