International Business Machines Corporation

Globalfoundries Inc.

Glenn C MacDougall

Qizhi Liu

Joseph P Hasselbach

Paula Fisher

Margaret A Faucher

Thomas H Gabert

John J Ellis-Monaghan

Arne Watson Ballantine

James William Adkisson

Kirk David Peterson

Bruce Walter Porth

Dale Warner Martin

Donna Kaye Johnson

George A Dunbar, Iii

James V Hart, Iii

Aspects of the invention provide a method of forming a bipolar junction transistor. The method includes: providing a semiconductor substrate including a uniform silicon nitride layer over an emitter pedestal, and a base layer below the emitter pedestal; applying a photomask at a first end and a second end of a base region; and performing a silicon nitride etch with the photomask to simultaneously form silicon nitride spacers adjacent to the emitter pedestal and exposing the base region of the bipolar junction transistor. The silicon nitride etch may be an end-pointed etch.

Self-aligned emitter-base region

A method of fabricating polysilicon lines and polysilicon gates, the method of including: providing a substrate; forming a dielectric layer on a top surface of the substrate; forming a polysilicon layer on a top surface of the dielectric layer; implanting the polysilicon layer with N-dopant species, the N-dopant species about contained within the polysilicon layer; implanting the polysilicon layer with a nitrogen containing species, the nitrogen containing species essentially contained within the polysilicon layer.

Method for fabricating doped polysilicon lines

The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.

Method for reducing dark current effects in a charge couple device

Growing community of inventors

Covington, LA, United States of America

Glenn C MacDougall