Samsung Electronics Co., Ltd.

Dow Corning Corporation

Glenn Allen Cerny

Sung-Hoon Yang

Mark Jon Loboda

Wan-Shick Hong

Byung Keun Hwang

Kyuha Chung

Byung-Keun Hwang

The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Deposition method of insulating layers having low dielectric constant of semiconductor devices

This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

H:SiOC coated substrates

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Midland, MI, United States of America

Glenn Allen Cerny