Semifab Incorporated

Tokyo Electron Limited

Applied Chemical Solutions

Supercritical Systems, Inc.

Axiom International Group, LLC

Glenn A Roberson, Jr

Robert M Genco

Robert B Eglinton

Gregory K Mundt

Wayland Comer

William H Mullee

Marc De Leeuwe

G Kyle Mundt

J Tobin Geatz

Eugene W Bernosky

Bentley J Palmer

Edward T Ferri, Jr

Paul Domato

Edward T Ferrie, Jr

A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process

A device is used to extract manure from bedding material in a manner that maximizes the amount of manure extracted from the bedding material. The device includes a detachable scoop head having a plurality of apertures, a detachable motor assembly coupled to the scoop head for vibrating the device, and a detachable handle coupled to the motor assembly via a connector. The handle can include a power pack for supplying electrical power to the motor assembly. The apertures are preferably formed between elongated elements. The power pack, which can be housed within the handle, forms a counterweight to the scoop head when the device is lifted. The device can further include a stand having a release mechanism coupled to the device, wherein the release mechanism releases the stand in a fully deployed position to facilitate raising the scoop head.

Vibrating scoop basket

A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process

The system and method for molecular contamination control permits purging a SMIF pod to desired levels of relative humidity, oxygen, or particulates. The SMIF pod includes an inlet port including a check valve and filter assembly for supplying a clean, dry gaseous working fluid to maintain low levels of moisture, oxygen, and particulate content around materials contained in the SMIF pod. The SMIF pod outlet port, which also includes a check valve and filter assembly, is connected with an evacuation system. Flow of purge gas inside the SMIF pod can be directed with one or more nozzle towers to encourage laminar flow inside the pod, and one or more outlet towers., having a function similar to that of the inlet tower, may also be provided. The purge gas can be dried by exposure to a desiccant, heated to temperatures between about 100&deg; C. and about 120&deg; C., and can be tested for baseline constituent levels prior to or after introduction into a SMIF pod. Multiple SMIF pods can also be purged by a single contamination control base unit.

Molecular contamination control system

Removal of CMP residue from semiconductors using supercritical carbon dioxide process

The system and method for molecular contamination control permits purging a SMIF pod to desired levels of relative humidity, oxygen, or particulates. The SMIF pod includes an inlet port including a check valve and filter assembly for supplying a clean, dry gaseous working fluid to maintain low levels of moisture, oxygen, and particulate content around materials contained in the SMIF pod. The SMIF pod outlet port, which also includes a check valve and filter assembly, is connected with an evacuation system. Flow of purge gas inside the SMIF pod can be directed with one or more nozzle towers to encourage laminar flow inside the pod, and one or more outlet towers,, having a function similar to that of the inlet tower, may also be provided. The purge gas can be dried by exposure to a desiccant, heated to temperatures between about 100&deg; C. and about 120&deg; C., and can be tested for baseline constituent levels prior to or after introduction into a SMIF pod. Multiple SMIF pods can also be purged by a single contamination control base unit.

The docking and purging system docks a modular isolation container for substrates used in manufacturing integrated circuits for purging and processing in a processing environment. A door portion of the docking and purging system includes a shelf for receiving the modular isolation container before insertion in a docking chamber formed in the housing connected for communication with the processing environment. A vacuum manifold with suction cups is provided for gripping and removing the modular isolation container door to allow access to the interior chamber of the modular isolation container. The docking chamber and interior chamber of the modular isolation container can also be purged of particulate contaminates by filtered air or inert gas ducted to the docking chamber.

Docking and environmental purging system for integrated circuit wafer

The system and method for molecular contamination control permits purging a SMIF pod to desired levels of relative humidity, oxygen, or particulates. The SMIF pod includes an inlet port including a check valve and filter assembly for supplying a clean, dry gaseous working fluid to maintain low levels of moisture, oxygen, and particulate content around materials contained in the SMIF pod. The SMIF pod outlet port, which also includes a check valve and filter assembly, is connected with an evacuation system. Flow of purge gas inside the SMIF pod can be directed with one or more nozzle towers to encourage laminar flow inside the pod, and one or more outlet towers, having a function similar to that of the inlet tower, may also be provided. The purge gas can be dried by exposure to a desiccant, heated to temperatures between about 100.degree. C. and about 120.degree. C., and can be tested for baseline constituent levels prior to or after introduction into a SMIF pod. Multiple SMIF pods can also be purged by a single contamination control base unit.

Apparatus and method for accurate measuring and mixing of chemicals is disclosed. The apparatus includes one or more metered vessels having a container of predetermined volume and at least one constricted vent tube therein. By mounting a sensor on the constricted vent tube, a greatly amplified measurement of the precise chemical volume in the metered vessel is provided. The apparatus and method of the present invention readily lends itself to a variety of applications and can be adapted to handle virtually any form of chemical mixing, diluting, or generating process.

Process for precise volumetrio diluting/mixing of chemicals

Process and apparatus for precise volumetric diluting/mixing of chemicals

A device for drying articles such as semiconductor wafers comprising a vacuum process chamber for holding articles to be dried; a vapor generator substantially isolated from the process chamber for supplying a substance such as isopropyl alcohol in vapor form to the process chamber; a heater for heating the walls of the process chamber to discourage the substance vapor from condensing on the inside walls of the process chamber. The device can also be used for rinsing and cleansing articles prior to drying.

Growing community of inventors

Hollister, CA, United States of America

Glenn A Roberson, Jr