Applied Materials, Inc.

Glen T Mori

Song-Moon Suh

Jaim Nulman

Seshadri Ramaswami

Steven Victor Sansoni

Yueh Sheng Ow

Murali K Narasimhan

Keith J Hansen

Vikram Pavate

Ananthkrishna Jupudi

Jeffrey Allen Brodine

Aksel Kitowski

Arkajit Roy Barman

Ke Chang

Roman M Mostovoy

Loke Yuen Wong

Daniel Owen Clawson

Arvind Sundarrajan

Guan Huei See

Joe F Sommers

Pulkit Agarwal

Mark D Menzie

Shyh-Nung Steve Lin

Robert Dinsmore

Lolita L Sharp

Vijay D Parkhe

John C Forster

Sang Ho Yu

Joshua Collins

Upendra V Ummethala

Kai Wu

Cheng-Hsiung Matt Tsai

James Matthew Holden

Yuichi Wada

Michael C Kutney

Christopher L Beaudry

Chin Hock Toh

Prayudi Lianto

Cheng-Hsiung Matthew Tsai

Daniel A Greenberg

Bonnie T Chia

Kie Jin Park

Arvinder Manmohan Singh Chadha

Gaurav Mehta

Chien-Kang Hsiung

Ramesh Chidambaram

Amulya Ligorio Athayde

Pin Gian Gan

Ricardo Fujii Vinluan

Wei Hao Kew

Muhammad Adli Danish Bin Abdullah

Mark McTaggart Wylie

Shalina D Sudheeran

Sik Hin Chi

Shyh-Nung Lin

Shih-Chao Hung

An electrostatic chuck assembly includes a first puck plate including one or more first functional elements, a second puck plate including one or more second functional elements, and an interface layer at least partially bonding the first puck plate and the second puck plate.

Modular substrate support assembly

Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

Methods and apparatus for processing a substrate

Substrate transfer robot blades used to engage and support a substrate during transfer include a blade body having a blade support surface and at least one pad having a top surface and an opposite bottom surface, a central opening extending from the top surface to the bottom surface, and a resilient portion formed from the at least one pad. The resilient portion formed from the at least one pad extends from and cantilevers from a side surface of the central opening of the at least one pad that is disposed directly on the side surface at the end of a long axis of the resilient portion. The resilient portion further includes a curved substrate contact surface on an outermost end of the resilient portion on which a substrate is supported when disposed on the substrate transfer robot blade.

Compliant robot blade for substrate support and transfer

Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

Methods and apparatus for backside via reveal processing

Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Variable frequency microwave (VFM) processes and applications in semiconductor thin film fabrications

Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Substrate support apparatus having reduced substrate particle generation

Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Compliant robot blade for defect reduction

Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a first metal layer formed atop the polymer dielectric layer; depositing a polymer layer atop the substrate; patterning the polymer layer to form a plurality of openings, wherein the plurality of openings comprises a first opening formed proximate the metal pad; depositing a first barrier layer atop the polymer layer; depositing a dielectric layer atop the first barrier layer; etching the dielectric layer and the first barrier layer from within the first opening and a field region of the polymer layer; depositing a second barrier layer atop the substrate; depositing a second metal layer atop the substrate wherein the second metal layer fills the plurality of openings; and etching the second metal layer from a portion of the field region of the polymer layer.

Structure and method of fabricating three-dimensional (3D) metal-insulator-metal (MIM) capacitor and resistor in semi-additive plating metal wiring

Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

Substrate transfer robot end effector

Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

In situ chamber clean with inert hydrogen helium mixture during wafer process

A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.

Methods and apparatus for cleaning a substrate

Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation

Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Finned shutter disk for a substrate process chamber

Growing community of inventors

Pacifica, CA, United States of America

Glen T Mori