Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Lam Research Corporation

Glen Gilchrist

Shurong Liang

Jeffrey W Anthis

Richard John Hertel

Benjamin Schmiege

Tsung-Liang Chen

Gang Shu

Costel Biloiu

Vikram Singh

Christopher W Campbell

Alex Kontos

Ivan L Berry, Iii

Jay R Wallace

Kevin M Daniels

Ernest E Allen

Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume.

System and method for spatially resolved optical metrology of an ion beam

A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.

System and method for controllable non-volatile metal removal

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

Apparatus and techniques to treat substrates using directional plasma and point of use chemistry

Provided herein are techniques for treating vertical surface features of a semiconductor device with ions. In some embodiments, a method for forming a semiconductor device, may include providing a set of surface features extending from a substrate, the set of surface features including a sidewall. The method may include treating the sidewall with an ion beam disposed at an angle, the angle being a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the substrate. The method may further include rotating the substrate about the perpendicular to the plane while the sidewall is treated with the ion beam to impact an entire height of the sidewall with the ion beam.

Angular control of ion beam for vertical surface treatment

A workpiece processing apparatus allowing independent control of the extraction angles of charged ions and reactive neutrals is disclosed. The apparatus includes an extraction plate having an extraction aperture through which charged ions pass. Plasma sheath modulation and electric fields may be used to determine the extraction angle of the charged ions. The extraction plate also includes one or more neutral species channels, separate from the extraction aperture, through which reactive neutrals are passed at a selected extraction angle. The geometric configuration of the neutral species channels determines the extraction angle of the reactive neutrals. The neutral species channel may also comprise a suppressor, to reduce the number of charged ions that pass through the neutral species channel. The apparatus may be used for various applications, such as directed reactive ion etching.

Angle control for radicals and reactive neutral ion beams

A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.

Gas injection system for ion beam device

Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature. The method includes removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature after exposing the substrate to the UV light.

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Danvers, MA, United States of America

Glen Gilchrist