Jds Uniphase Corporation

Lumentum Operations LLC

Glen Drake

Karl M Kissa

William J Minford

Gregory J McBrien

Jason Jiazhan Xu

Kate Versprille

Marc K Von Gunten

Charles Andrew Hulse

Benjamin F Catching

Siu Kwan Cheung

Jerry Zieba

Donald M Friedrich

Jason Reed

Hiren V Shah

Julia Duncan

A radio frequency (RF) interconnect for an optical modulator may comprise a circuit board to route a set of RF signals from a corresponding set of RF feeds to a substrate interface on a surface of a substrate of the optical modulator. The circuit board may be positioned along the surface of the substrate of the optical modulator. The circuit board may include a set of traces. A trace, of the set of traces, may be connected to a corresponding RF feed, of the set of RF feeds, at a height different than a height of the surface of the substrate of the optical modulator. The trace may be connected to the substrate interface.

High bandwidth RF or microwave interconnects for optical modulators

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.

Humidity tolerant electro-optic device

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration and other effects that can be present in non-hermetic packages. The bias electrodes include an upper split portion and an optically transparent lower portion. The optically transparent lower layer improves modulation frequency and reduces optical loss.

The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.

Wafer scale method of manufacturing optical waveguide devices and the waveguide devices made thereby

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration, galvanic, and other effects that can be present in non-hermetic packages. The RF electrodes are supported by a first surface of the electro-optic substrate, while the bias electrodes are supported by a second opposite surface.

Electro-optic device

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.

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Windsor, CT, United States of America

Glen Drake