Lucent Technologies Inc.

Triquint Technology Holding Co.

Agere Systems Optoelectronics Guardian Corp.

Gleb E Shtengel

Mindaugas Fernand Dautartas

Utpal Kumar Chakrabarti

Carl Edward Gaebe

Abdallah Ougazzaden

Richard Bendicks Bylsma

Rudolf Feodor Kazarinov

Julie Sheridan-Eng

Charles H Joyner

Robert Louis Hartman

Robert Alan Hamm

Charles William Lentz

Daniel Paul Wilt

Lawrence Edwin Smith

Lars E Eng

Joseph Brian Seiler

Aaron Eugene Bond

Lisa Ann Peterson

Padman Parayanthal

An improved semiconductor laser (distributed feedback or Bragg reflector laser) is disclosed, having reducing wavelength chirping. In a laser having a substrate, an optical waveguide layer disposed on the substrate with a grating region, and a cladding region disposed on the optical waveguide layer, an isolation region is positioned in at least one of the substrate, optical waveguide layer, and cladding layer. The isolation region is comprised of a material adapted to increase the resistivity of the one or more layers in which it is placed to reduce electrical cross-talk and wavelength chirping. Preferably, the isolation region is positioned in at least the cladding layer, which the inventors have found is the greatest contributor of cross-talk and wavelength chirping.

Apparatus and method for minimizing wavelength chirp of laser devices

A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.

Method and device for preventing zinc/iron interaction in a semiconductor laser

A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH /H etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

InA1As etch stop layer for precise semiconductor waveguide fabrication

The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material. The contact layer is made of InGaAs or InGaAsP, and the invention is most advantageously used in an electroabsorption modulated laser or capped mesa buried heterostructure laser.

Optical device including carbon-doped contact layers

The invention is a laser assembly for reducing distortion ripple. The assembly includes a spherical lens which has a portion of its surface made optically asymmetric to prevent multiple reflections of scattered light within the lens.

Analog laser assembly

The invention is a laser assembly with reduced distortion ripple. The assembly includes a spherical lens for collimating light emitted from the laser. The lens is made of a material which attenuates scattered light which is the source of ripple without appreciably affecting the main beam.

Semiconductor laser assembly with reduced ripple

An optoelectronic device, such as an electro-absorption modulator laser (EML), is configured to a submount using an asymmetric inductive peaking scheme in which a first wire connects a modulator signal electrode on the submount to the modulator contact pad on the device and a second wire connects the modulator contact pad to an integrated resistor on the submount, where the first and second wires have substantially different inductances. Such asymmetric inductive peaking improves the high-frequency performance of the resulting packaged device by providing a higher transmission coefficient and a lower return loss at high frequencies than devices configured using conventional symmetric inductive peaking in which the inductances of the two connecting wires are purposely designed to be equal. In one embodiment, in which the device will be modulated by a standard 50-ohm electrical signal generator, the integrated resistor is a 50-ohm device, the first wire is kept as short as practicable (e.g., about 0.3 mm) and the second wire is made as long as practicable (e.g., about 1.5 mm). The resulting packaged devices show good high-frequency performance for a wide range of device parameters.

Asymmetric inductive peaking for optoelectronic devices

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Hanover, MD, United States of America

Gleb E Shtengel